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Catherine Algani
Researcher at Conservatoire national des arts et métiers
Publications - 86
Citations - 535
Catherine Algani is an academic researcher from Conservatoire national des arts et métiers. The author has contributed to research in topics: Radio over fiber & Monolithic microwave integrated circuit. The author has an hindex of 11, co-authored 79 publications receiving 439 citations.
Papers
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Journal ArticleDOI
A 60 GHz Wireless Home Area Network With Radio Over Fiber Repeaters
J. Guillory,Eric Tanguy,Anna Pizzinat,Benoit Charbonnier,Sylvain Meyer,Catherine Algani,Hongwu Li +6 more
TL;DR: In this paper, the authors proposed a radio-over-fiber (RoF) infrastructure at home to expand the 60 GHz radio coverage by using a RoF link working at intermediate frequency with two hops in the air.
Journal ArticleDOI
VCSEL-Based Radio-Over-G652 Fiber System for Short-/Medium-Range MFH Solutions
Jacopo Nanni,Jean-Luc Polleux,Catherine Algani,Simone Rusticelli,Federico Perini,Giovanni Tartarini +5 more
TL;DR: A cost effective, low-consumption radio over fiber system based on 850-nm Single Mode Vertical Cavity Surface Emitting Lasers and Standard Single Mode Fibers allows even in critical cases to maintain at high level the quality of the received signal.
Journal ArticleDOI
Radio-Over-Fiber Architectures
J. Guillory,Sylvain Meyer,I Sianud,Anne-Marie Ulmer-Moll,Benoit Charbonnier,Anna Pizzinat,Catherine Algani +6 more
TL;DR: This work proposes radio-over-fiber (RoF) architectures, from the most basic (point-to-point) to the most innovative (multipoint-to"-to- Multipoint)
Journal ArticleDOI
Electrical Modeling of Semiconductor Laser Diode for Heterodyne RoF System Simulation
TL;DR: In this paper, the optical phase noise is integrated into an electrical equivalent model of the laser diode to simulate radio over fiber systems in an electrical simulator, where the laser output is represented here in the optical field with both intensity and phase noises.
Proceedings ArticleDOI
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology
TL;DR: In this paper, the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process is presented. And the authors show that 50µm HPTs are exhibits highest gain.