Ch. Ramesh

TL;DR: In this article, high-responsivity metal-semiconductor-metal (MSM) structure based ultraviolet (UV) GaN photodetectors fabricated on various GaN nanostructures such as porous nanocolumn network (PNCN), nanowall networks (NWNs), and granular and compact thin films.

TL;DR: In this paper, a self-aligned single crystalline GaN array on flexible Ta metal foil using laser molecular beam epitaxy was reported, and the results demonstrate an effective way of fabricating well-aligned GaN nanorods on flexible metal foils for developing simple, relatively inexpensive, and flexible photo-electrodes for photocatalytic solar water splitting applications.

TL;DR: In this paper, the role of growth temperature, laser energy density and laser repetition rate in the growth of 1D GaN nanorod on metal foils was investigated, and the results showed that a higher growth temperature is very crucial in determining the formation of the GaN nano-structures.

TL;DR: In this paper, the effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated.

TL;DR: In this article, a vertically well-aligned homo-epitaxial GaN nanowall network (NWN) was grown on metal organic chemical vapor deposited 3.5μm thick GaN (0001) on c-sapphire by laser assisted molecular beam epitaxy (LMBE).