A review on highly ordered, vertically oriented TiO2 nanotube arrays: Fabrication, material properties, and solar energy applications

Hydrogen sensors are of increasing importance in connection with the development and expanded use of hydrogen gas as an energy carrier and as a chemical reactant. There are an immense number of sensors reported in the literature for hydrogen detection and in this work these sensors are classified into eight different operating principles. Characteristic performance parameters of these sensor types, such as measuring range, sensitivity, selectivity and response time are reviewed and the latest technology developments are reported. Testing and validation of sensor performance are described in relation to standardisation and use in potentially explosive atmospheres so as to identify the requirements on hydrogen sensors for practical applications.

Hydrogen Sensors - A review

One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near-edge region can be fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots). While the technique is powerful and simple, the accuracy of the fitted band-gap result is seldom stated or known. We tackle this question by refitting a large number of Tauc plots from the literature and look for trends. Nominally pure zinc oxide (ZnO) was chosen as a material with limited intrinsic deviation from stoichiometry and which has been widely studied. Our examination of the band gap values and their distribution leads to a discussion of some experimental factors that can bias the data and lead to either smaller or larger apparent values than would be expected. Finally, an easily evaluated figure-of-merit is defined that may help guide more accurate Tauc fitting. For samples with relatively sharper Tauc plot shapes, the population yields Eg(ZnO) as 3.276 ± 0.033 eV, in good agreement with data for single crystalline material.

Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system

This paper provides a detailed overview of developments in transducer materials technology relating to their current and future applications in micro-scale devices. Recent advances in piezoelectric, magnetostrictive and shape-memory alloy systems are discussed and emerging transducer materials such as magnetic nanoparticles, expandable micro-spheres and conductive polymers are introduced. Materials properties, transducer mechanisms and end applications are described and the potential for integration of the materials with ancillary systems components is viewed as an essential consideration. The review concludes with a short discussion of structural polymers that are extending the range of micro-fabrication techniques available to designers and production engineers beyond the limitations of silicon fabrication technology.

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New materials for micro-scale sensors and actuators An engineering review

Recent progress in synthesis, properties and potential applications of SiC nanomaterials

We report a simple and inexpensive way for the preparation of highly transparent ZnO thin films and their application as active layer in UV ray sensor devices. ZnO thin films were deposited on glass substrates by thermal evaporation of pure ZnO powder. The as-deposited films were then annealed at different temperatures (100, 200, 300 and 400 °C) for various time durations (5, 15, 25 and 35 min) to make optically transparent in the visible region. The films annealed at 300 °C for 15 min show very good visible transparency and other material properties. These films were used as the active material for Ag/ZnO/Ag UV sensor devices. The sensor devices are photo conductive type and only sensitive in the UV region of the electromagnetic spectrum. Maximum photo-current gain of the UV sensor device is ∼2. Possible sensing mechanism has been discussed.

Preparation of transparent ZnO thin films and their application in UV sensor devices

Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But these substrates are costly and insulating in nature and also are not available in large diameter. Silicon can meet the requirements for a low cost and conducting substrate and will enable integration of optoelectronic or high power electronic devices with Si based electronics. But the main problem that hinders the rapid development of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the first MBE grown GaN based LED on Si was made and now the quality of material grown on silicon is comparable to that on sapphire substrate. It is only a question of time before Si based GaN devices appear on the market. This article is a review of the latest developments in GaN based devices on silicon.

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Silicon—a new substrate for GaN growth

Polyaniline (PANI)/inorganic-nanomaterial based nanocomposites are attractive for gas sensing applications due to the synergistic behavior arising at their interfaces. In this work, HCl doped-PANI-nanofibers/WS2 nanosheet based nanocomposites were prepared by the template-free in situ polymerization of aniline on WS2 nanosheets, which were previously obtained by direct liquid exfoliation. The optimal performance was shown by the PANI/WS2 (w/w 10%) sample and it was characterized extensively using electron microscopy (SEM and TEM), several spectroscopic techniques (UV-Vis, Raman and FTIR), and X-ray diffraction. The nanomaterial was deposited on gold interdigitated electrodes which were then used as chemiresistive transducers for ammonia sensing at room temperature. The device was tested for ammonia concentrations of 50–200 ppm. The resistance of the device was found to increase with the concentration of ammonia vapours and a maximum response of up to 81% was recorded for 200 ppm of ammonia. The long-term stability, selectivity, sensitivity, and repeatability of the device were investigated. Apart from these, the device was also found to perform well under humid conditions. A mechanism based on the synergistic behavior due to the p–n heterogeneous characteristics at the interface of PANI and WS2 is proposed.

Ammonia vapour sensing properties of in situ polymerized conducting PANI-nanofiber/WS2 nanosheet composites

Cubic silicon carbide (3C-SiC) thin films were grown on (100) and (111) Si substrates by CVD technique using hexamethyldisilane (HMDS) as the source material in a resistance heated furnace. HMDS was used as the single source for both Si and C though propane was available for the preliminary carbonization. For selective epitaxial growth, patterned Si (100) substrates were used. The effect of different growth parameters such as substrate orientation, growth temperature, precursor concentration, etc on growth was examined to improve the film quality. The surface morphology, microstructure and crystallinity of grown films were studied using optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and X-ray photoelectron spectroscopy (XPS).

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CVD growth and characterization of 3C-SiC thin films

The effect of Fe and Ni catalysts on the synthesis of carbon nanotubes (CNTs) using atmospheric pressure chemical vapor deposition (APCVD) was investigated. Field emission scanning electron microscopy (FESEM) analysis suggests that the samples grow through a tip growth mechanism. High-resolution transmission electron microscopy (HRTEM) measurements show multiwalled carbon nanotubes (MWCNTs) with bamboo structure for Ni catalyst while iron filled straight tubes were obtained with the Fe catalyst. The X-ray diffraction (XRD) pattern indicates that nanotubes are graphitic in nature and there is no trace of carbide phases in both the cases. Low frequency Raman analysis of the bamboo-like and filled CNTs confirms the presence of radial breathing modes (RBM). The degree of graphitization of CNTs synthesized from Fe catalyst is higher than that from Ni catalyst as demonstrated by the high frequency Raman analysis. Simple models for the growth of bamboo-like and tubular catalyst filled nanotubes are proposed.

Chacko Jacob

Papers

Preparation of transparent ZnO thin films and their application in UV sensor devices

Silicon—a new substrate for GaN growth

Ammonia vapour sensing properties of in situ polymerized conducting PANI-nanofiber/WS2 nanosheet composites

CVD growth and characterization of 3C-SiC thin films

The effect of Fe and Ni catalysts on the growth of multiwalled carbon nanotubes using chemical vapor deposition