With the fast development of the fifth-generation cellular network technology (5G), the future sensors and microelectromechanical systems (MEMS)/nanoelectromechanical systems (NEMS) are presenting a more and more critical role to provide information in our daily life. This review paper introduces the development trends and perspectives of the future sensors and MEMS/NEMS. Starting from the issues of the MEMS fabrication, we introduced typical MEMS sensors for their applications in the Internet of Things (IoTs), such as MEMS physical sensor, MEMS acoustic sensor, and MEMS gas sensor. Toward the trends in intelligence and less power consumption, MEMS components including MEMS/NEMS switch, piezoelectric micromachined ultrasonic transducer (PMUT), and MEMS energy harvesting were investigated to assist the future sensors, such as event-based or almost zero-power. Furthermore, MEMS rigid substrate toward NEMS flexible-based for flexibility and interface was discussed as another important development trend for next-generation wearable or multi-functional sensors. Around the issues about the big data and human-machine realization for human beings’ manipulation, artificial intelligence (AI) and virtual reality (VR) technologies were finally realized using sensor nodes and its wave identification as future trends for various scenarios.

Development Trends and Perspectives of Future Sensors and MEMS/NEMS.

Energy harvesting is the most effective way to respond to the energy shortage and to produce sustainable power sources from the surrounding environment. The energy harvesting technology enables scavenging electrical energy from wasted energy sources, which always exist everywhere, such as in heat, fluids, vibrations, etc. In particular, piezoelectric energy harvesting, which uses a direct energy conversion from vibrations and mechanical deformation to the electrical energy, is a promising technique to supply power sources in unattended electronic devices, wireless sensor nodes, micro-electronic devices, etc., since it has higher energy conversion efficiency and a simple structure. Up to now, various technologies, such as advanced materials, micro- and macro-mechanics, and electric circuit design, have been investigated and emerged to improve performance and conversion efficiency of the piezoelectric energy harvesters. In this paper, we focus on recent progress of piezoelectric energy harvesting technologies based on PbZrxTi1-xO3 (PZT) materials, which have the most outstanding piezoelectric properties. The advanced piezoelectric energy harvesting technologies included materials, fabrications, unique designs, and properties are introduced to understand current technical levels and suggest the future directions of piezoelectric energy harvesting.

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Recent Progress on PZT Based Piezoelectric Energy Harvesting Technologies

AlN piezoelectric thin films for energy harvesting and acoustic devices

This paper discusses piezoelectric acoustic devices based on widely used piezoelectric materials. Commonly used piezoelectric thin film deposition techniques and the influence of process parameters on the growth, texture and orientation of the films are discussed. Etching techniques are also outlined. A comparative study of different devices developed previously is given. Also, applications of developed devices in aero-acoustic and medical fields have been briefly discussed. Flow charts of various techniques of deposition along with a combined one for full acoustic device fabrication are given. Various techniques, frequently used for thin film characterization have been discussed. The testing and measurement techniques to determine the responses of acoustic devices such as sensitivity, resonance frequency, frequency response, piezoelectric co-efficient etc. have been briefly illustrated. This paper discusses common failure modes with respect to the field of use of acoustic devices. It also concisely discusses various reliability tests done in industries to assess the quality of the developed devices. This review has also suggested directions for future development of thin film acoustic sensors.

Piezoelectric MEMS based acoustic sensors: A review

This paper presents a bandwidth expansion method for dual-mass microelectromechanical system (MEMS) gyroscopes based on the pole–zero temperature compensation method. When the sense loop operates under open conditions, the mechanical sensitivity of the gyroscope structure conflicts with the bandwidth and is governed by the frequency difference between the drive and the sense modes (min {Δ ω 1, Δ ω 2}), which is proven to change with temperature during the experiment. The pole–zero temperature compensation proportional controller (PZTCPC) is proposed to expand the bandwidth under different temperatures based on the pole–zero compensation method. The force rebalancing combs stimulation method (FRCSM) is used to achieve accurate gyroscope bandwidth characteristics. The mechanical bandwidth of the gyroscope is proven to be approximately 13 Hz when the sense-mode loop is open, and the simulation results show that the PZTCPC method expands the bandwidth to greater than 91.7 Hz after the sense-mode loop is closed. The FRCSM experiments indicate that gyroscope bandwidth is expanded to 95 Hz at –40 °C, 94 Hz at 20 °C and 92 Hz at 60 °C, while the bandwidths at –40, 20, and 60 °C are all 93 Hz with the turntable method. The experimental curves match the simulation curves well and verify the simulation results. The new limiting condition of the closed-loop bandwidth is the trough generated by conjugate zeros, formed by superposition of in-phase and anti-phase sense modes.

Pole-Zero Temperature Compensation Circuit Design and Experiment for Dual-Mass MEMS Gyroscope Bandwidth Expansion

In this paper, we propose a novel method for pedestrian dead reckoning (PDR) using microelectromechanical system magnetic, angular rate, and gravity sensors, which includes a double-step unscented Kalman filter (DUKF) and hidden Markov model (HMM)-based zero-velocity-update (ZVU) algorithm. The DUKF divides the measurement updates of the gravity vector and the magnetic field vector into two steps in order to avoid the unwanted correction for the Euler angle error. The HMM-based ZVU algorithm is developed to recognize the ZVU efficiently. Thus, the proposed PDR method can reduce the position drift caused by the heading error and fault zero-velocity measurement. Experimental results demonstrate that the proposed method achieves better yaw estimate, as well as zero-velocity measurement, and obtains more accurate dead-reckoning position than other methods in the literature.

A Double-Step Unscented Kalman Filter and HMM-Based Zero-Velocity Update for Pedestrian Dead Reckoning Using MEMS Sensors

Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.

https://iopscience.iop.org/article/10.1088/1674-4926/37/10/101001/pdf

A review:aluminum nitride MEMS contour-mode resonator

In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d33-test should be smaller than the intrinsic value d33 due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d33 with the measurement results d33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d33 of AlN thin films.

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Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

https://www.mdpi.com/2072-666X/6/9/1236/pdf

Research on the Piezoelectric Properties of AlN Thin Films for

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0-180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

Chaowei Si

Papers

A Double-Step Unscented Kalman Filter and HMM-Based Zero-Velocity Update for Pedestrian Dead Reckoning Using MEMS Sensors

A review:aluminum nitride MEMS contour-mode resonator

Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

Research on the Piezoelectric Properties of AlN Thin Films for

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology.