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Cheng-Yin Wang

Researcher at Georgia Institute of Technology

Publications -  25
Citations -  742

Cheng-Yin Wang is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Gate dielectric & Atomic layer deposition. The author has an hindex of 14, co-authored 25 publications receiving 641 citations. Previous affiliations of Cheng-Yin Wang include National Taiwan University.

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GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

TL;DR: A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure with Raman light scattering analysis identifies a strain relaxation mechanism for lattice mismatch layers in the nanostructure.
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Stable organic thin-film transistors

TL;DR: An exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate brings OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.
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Molecular Engineering of Nonhalogenated Solution-Processable Bithiazole-Based Electron-Transport Polymeric Semiconductors

TL;DR: In this article, 2,2′-bithiazole was synthesized in one step and copolymerized with dithienyldiketopyrrolopyrrole to afford poly(dithienymylldiketsopyrylopyrdrug-biomethane)-bithiaide, PDBTz, which exhibited electron mobility reaching 0.3 cm2 V 1 s−1 in organic field effect transistor (OFET) configuration.
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A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

TL;DR: The origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes are discussed.
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Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays

TL;DR: In this article, the process of nanosphere lithography was developed and applied to LED surface texturing and nanorod device fabrication, and the authors observed a texture-size-dependent improvement of total light output.