Showing papers by "Chenming Hu published in 1971"
TL;DR: In this article, the properties of a new insulated-gate field effect tetrode which consists basically of an IGFET triode having a resistive-gate electrode with connections transverse to the source-drain dimension are described.
Abstract: Studies of the properties of a new insulated-gate field-effect tetrode which consists basically of an IGFET triode having a resistive-gate electrode with connections transverse to the source-drain dimension are described. Experimental tetrodes on silicon with nichrome gates are fabricated to demonstrate applications of the device as a mixer, an amplitude modulator, and an AGC amplifier. Theories are also developed to calculate the static and the high-frequency characteristics of the tetrode, and are found to be in good agreement with the experimental results.
18 citations