C
Chi Kong Kwok
Researcher at Virginia Tech
Publications - 10
Citations - 527
Chi Kong Kwok is an academic researcher from Virginia Tech. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 5, co-authored 10 publications receiving 517 citations.
Papers
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Journal ArticleDOI
Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process
Chi Kong Kwok,Seshu B. Desu +1 more
TL;DR: In this paper, a two-step seeding process was developed to lower the transformation temperature and modify the grain structure of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio.
Journal ArticleDOI
Pyrochlore to Perovskite phase-transformation in sol-gel derived lead-zirconate-titanate thin-films
Chi Kong Kwok,Seshu B. Desu +1 more
TL;DR: In this article, the pyrochlore to perovskite phase transformation in solgel derived lead-zirconate-titanate (PZT) films was studied by x-ray diffraction and transmission-electron microscopy (TEM).
Journal ArticleDOI
Formation kinetics of PbZrxTi1−xO3 thin films
Chi Kong Kwok,Seshu B. Desu +1 more
TL;DR: In this paper, the pyrochlore to perovskite transition in sputtered PZT thin films has been studied using SEM and XRD, and the results showed a linear growth rate for the perovsite phase, thereby indicating an interface controlled process.
Patent
Low temperature seeding process for ferroelectric memory device
Seshu B. Desu,Chi Kong Kwok +1 more
TL;DR: In this article, a process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead Zirconately titanate film, and then annealing the resulting lead ZIRconate Titanate to a significantly lower seeding temperature, to lessen interdiffusion among the films, electrodes and substrate, and to lessen thermal stresses.
Journal ArticleDOI
Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films
Chi Kong Kwok,Seshu B. Desu +1 more
TL;DR: In this paper, the authors studied the effect of point defects on the ferroelectric properties of sol gel PZT films and powders in different oxygen partial pressures and found that the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure.