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Journal ArticleDOI

Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process

Chi Kong Kwok, +1 more
- 01 Feb 1993 - 
- Vol. 8, Iss: 2, pp 339-344
TLDR
In this paper, a two-step seeding process was developed to lower the transformation temperature and modify the grain structure of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio.
Abstract
A two-step seeding process has been developed to lower the transformation temperature and modify the grain structure of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio. Previous study has shown that nucleation is the rate-limiting step for the perovskite formation. Therefore, any process that enhances the kinetics of nucleation is likely to decrease the transformation temperature. In this process, a very thin (45 nm) seeding layer of PbTiO3, which has a low effective activation energy for perovskite formation, was used to provide nucleation sites needed for the low temperature perovskite formation. In this study, we have shown that the pyrochlore-to-perovskite phase transformation temperature of PbZrxTi1−xO3 films of high Zr/Ti ratio (e.g., x = 53/47) can be lowered by as much as 100 °C. The grain size of these films can also be substantially modified by this two-step approach.

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Citations
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Journal ArticleDOI

Ferroelectric thin films for micro-sensors and actuators: a review

TL;DR: In this article, the authors present a review of the deposition, integration, and device fabrication of ferroelectric PbZrxTi1-xO3 (PZT) films for applications in microelectromechanical systems.
Journal ArticleDOI

A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

TL;DR: In this paper, a review of PZ-based AFE materials is presented, focusing on the external field (electric field, hydrostatic pressure and temperature) dependences of the AFE-FE phase transition, with a specific attention to the performances of AFE films for various potential applications, such as high energy storage, electric field induced strains, pyroelectric effect and electrocaloric effect.
Journal ArticleDOI

Chemical Solution Deposition of Perovskite Thin Films

TL;DR: The use of chemical solution deposition for the fabrication of perovskite thin films is reviewed in this paper, where a variety of approaches including sol−gel, chelate, and metalloorganic decomposition have all been employed with success in the preparation of these materials.
Journal ArticleDOI

Chemical solution deposition of electronic oxide films

TL;DR: Schwartz et al. as mentioned in this paper reviewed various chemical aspects of different approaches, including sol-gel, hybrid, and metallo-organic decomposition (MOD) routes, which all have been successfully applied for the deposition of this class of materials.
Journal ArticleDOI

PZT thin films for microsensors and actuators: Where do we stand?

TL;DR: This paper reviews deposition, integration, and device fabrication of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) films for applications in micro-electromechanical systems and some preliminary conclusions are presented.
References
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Book ChapterDOI

Better Ceramics Through Chemistry

TL;DR: In this article, the authors apply polymeric network theory to the design of gel ultrastructures and apply scaling calculations based on molecular orbital calculations for prediction of the silanol polymerization mechanism.
Journal ArticleDOI

Ferroelectricity versus Antiferroelectricity in the Solid Solutions of PbZrO3 and PbTiO3

TL;DR: The phase diagram of the solid solutions of PbZrO 3 -PbTiO 3 system has been established by investigating dielectric, dilatometric, calorimetric and structural properties as mentioned in this paper.
Journal ArticleDOI

Enhanced Densification of Boehrmte Sol-Gels by α-Alumina Seeding

TL;DR: In this paper, the α-alumina seeds were added to a 20% boehmite hydrosol at pH = 3 and the seeded gel sintered to 98% of theoretical density after 100 min at 1200°C.
Journal ArticleDOI

Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding

TL;DR: In this paper, a two-step process was developed to form highly oriented thin films in material systems with dissimilar crystal structures and interatomic spacings, and the growth of highly (100) oriented thin film of cubic ZrO2 (25 mol % Y2O3) on (0001) single crystal substrates was demonstrated.
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