C
Choi Kyu-Hyun
Researcher at Samsung
Publications - 6
Citations - 93
Choi Kyu-Hyun is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & Polycrystalline silicon. The author has an hindex of 4, co-authored 6 publications receiving 93 citations.
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Patent
Programmable interconnect device and method of manufacturing same
TL;DR: A programmable interconnect device with an intrinsic polycrystalline antifuse dielectric layer as discussed by the authors is suitable for field programmable interfaces, such as FPGAs.
Patent
Power and signal line bussing method for memory devices
TL;DR: In this article, the power and ground lines are parallel and positioned in an adjacent alternating pattern such that a power line is positioned adjacent a ground line, which was positioned adjacent another power line and so on.
Patent
Method for manufacturing poly-crystal sillicon having high resistance
TL;DR: In this article, a method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a poly-crystaline silicon layer for a resistor area over a silicon semiconductor substrate, a second step for growing a first thermal oxide layer having a specified depth over the poly-cell, ion-implanting with the nitrogen thereon, and growing a second thermal oxide on the ion-implanted layer, and a third step for forming a resistor pattern of the polycelline silicon with a photo etching method.
Patent
Method of manufacturing high resistance polycrystalline silicon
TL;DR: In this article, a method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a poly-crystaline silicon layer for a resistor area over a silicon semiconductor substrate, a second step for growing a first thermal oxide layer having a specified depth over the poly-cell, ion-implanting with the nitrogen thereon, and growing a second thermal oxide on the ion-implanted layer, and a third step for forming a resistor pattern of the polycelline silicon with a photo etching method.
Patent
Verfahren zur herstellung von polykristallinem silizium mit hohem widerstandswert
TL;DR: In this article, it was shown that the resistance of polycrystalline silicon is dependent upon the amount of the nitride component, and a high value of resistance may be achieved.