Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

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Silicon nanostructures for photonics and photovoltaics

The creation of a sustainable energy generation, storage, and distribution infrastructure represents a global grand challenge that requires massive transnational investments in the research and development of energy technologies that will provide the amount of energy needed on a sufficient scale and timeframe with minimal impact on the environment and have limited economic and societal disruption during implementation. In this opinion paper, we focus on an important set of solar, thermal, and electrochemical energy conversion, storage, and conservation technologies specifically related to recent and prospective advances in nanoscale science and technology that offer high potential in addressing the energy challenge. We approach this task from a two-fold perspective: analyzing the fundamental physicochemical principles and engineering aspects of these energy technologies and identifying unique opportunities enabled by nanoscale design of materials, processes, and systems in order to improve performance and reduce costs. Our principal goal is to establish a roadmap for research and development activities in nanoscale science and technology that would significantly advance and accelerate the implementation of renewable energy technologies. In all cases we make specific recommendations for research needs in the near-term (2–5 years), mid-term (5–10 years) and long-term (>10 years), as well as projecting a timeline for maturation of each technological solution. We also identify a number of priority themes in basic energy science that cut across the entire spectrum of energy conversion, storage, and conservation technologies. We anticipate that the conclusions and recommendations herein will be of use not only to the technical community, but also to policy makers and the broader public, occasionally with an admitted emphasis on the US perspective.

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Nanoscale design to enable the revolution in renewable energy

Concerns over possible toxicities of conventional metal-containing quantum dots have inspired growing research interests in colloidal silicon nanocrystals (SiNCs), or silicon quantum dots (SiQDs). This is related to their potential applications in a number of fields such as solar cells, optoelectronic devices and fluorescent bio-labelling agents. The past decade has seen significant progress in the understanding of fundamental physics and surface properties of silicon nanocrystals. Such understanding is based on the advances in the preparation and characterization of surface passivated colloidal silicon nanocrystals. In this critical review, we summarize recent advances in the methods of preparing high quality silicon nanocrystals and strategies for forming self-assembled monolayers (SAMs), with a focus on their bio-applications. We highlight some of the major challenges that remain, as well as lessons learnt when working with silicon nanocrystals (239 references).

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Colloidal silicon quantum dots: from preparation to the modification of self-assembled monolayers (SAMs) for bio-applications

Progress in Materials Science Vol. 9. Edited by Dr. Bruce Chalmers. (Incorporating “Progress in Metal Physics”, Volumes 1–8.) Pp. 389. (London and New York: Pergamon Press, 1961.) 120s. net; 20 dollars.

Progress in Materials Science

Silicon quantum dot nanostructures for tandem photovoltaic cells

Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices

Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells

Amorphous Si1−xCx/SiC multilayer films were prepared by alternating deposition of Si-rich Si1−xCx and near-stoichiometric SiC layers by using magnetron sputtering. The as-deposited films were annealed at different temperatures (Ta) from 800 to 1100 °C. The influence of Ta and Si content in the Si-rich layer on the layered structural stability and on the formation of Si and/or SiC nanocrystals (NCs) is investigated by a variety of analytical techniques, including x-ray reflectivity (XRR), x-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectrometry (FTIR). XRR showed that Si1−xCx/SiC multilayers annealed at temperatures of up to 800 °C retain their layered structure. XRD revealed that Si NCs were formed in samples with a high Si content in the Si-rich layer for Ta≥800 °C. At annealing temperatures of 900 °C or greater, the formation of Si NCs was accompanied by the formation of β-SiC NCs. Additionally, the formation of Si and SiC NCs was c...

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Doping of Si nanocrystals is an important topic in the emerging field of Si nanocrystals based all-Si tandem solar cells. Boron-doped Si nanocrystals embedded in a silicon dioxide matrix were realized by a co-sputtering process, followed by high temperature annealing. The x-ray photoelectron spectroscopy B 1s signal attributable to Si–B (187 eV) and/or B–B (188 eV) indicates that the boron may exist inside Si nanocrystals. A higher probability of effective boron doping was suggested for Si-rich oxide films with a low oxygen content, Then, structural and optical properties were characterized with a focus on the effects of the boron content on Si quantum dots. The results show that as the boron content increases, the nanocrystal size is slightly reduced and the Si crystallization is suppressed. The photoluminescence intensity of the films is decreased as the boron content increases. This is due to boron-induced defects and/or Auger processes induced by effective doping. These results can provide optimal conditions for future Si quantum dot based solar cells.

https://iopscience.iop.org/article/10.1088/0957-4484/19/42/424019/pdf

Chris Flynn

Papers

Silicon quantum dot nanostructures for tandem photovoltaic cells

Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices

Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Effects of boron doping on the structural and optical properties of silicon nanocrystals in a silicon dioxide matrix.