SnO2: A comprehensive review on structures and gas sensors

Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

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Silicon nanostructures for photonics and photovoltaics

Silicon nanostructures for third generation photovoltaic solar cells

The unique plasma-specific features and physical phenomena in the organization of nanoscale soild-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed. These effects lead to the possibility to localize and control energy and matter at nanoscales and to produce self-organized nano-solids with highly unusual and superior properties. A unifying conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasma-specific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained. When the plasma is localized to micrometer and nanometer dimensions, new emergent phenomena arise. The examples range from semiconducting quantum dots and nanowires, chirality control of single-walled carbon nanotubes, ultra-fine manipulation of graphenes, nano-diamond, and organic matter to nano-plasma effects and nano-plasmas of different states of matter.

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

The unique plasma-specific features and physical phenomena in the organization of nanoscale solid-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed. These effects lead to the possibility to localize and control energy and matter at nanoscales and to produce self-organized nano-solids with highly unusual and superior properties. A unifying conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasma-specific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained. When the plasma is localized to micrometer and nanometer dimensions, new emergent phenomena arise. The examples range from semiconducting quantum dots and nanowires, chirality control of single-walled carbon nanotubes, ultra-fine manipulation of graphenes, nano-diamond, and organic matter, to nano-plasma effects and nano-plasmas of different states of matter.

Plasma Nanoscience: from Nano-Solids in Plasmas to Nano-Plasmas in Solids

Silicon quantum dot nanostructures for tandem photovoltaic cells

Silicon (Si) quantum dot (QD) materials have been proposed for 'all-silicon' tandem solar cells. In this study, solar cells consisting of phosphorus-doped Si QDs in a SiO2 matrix deposited on p-type crystalline Si substrates (c-Si) were fabricated. The Si QDs were formed by alternate deposition of SiO2 and silicon-rich SiOx with magnetron co-sputtering, followed by high-temperature annealing. Current tunnelling through the QD layer was observed from the solar cells with a dot spacing of 2 nm or less. To get the required current densities through the devices, the dot spacing in the SiO2 matrix had to be 2 nm or less. The open-circuit voltage was found to increase proportionally with reductions in QD size, which may relate to a bandgap widening effect in Si QDs or an improved heterojunction field allowing a greater split of the Fermi levels in the Si substrate. Successful fabrication of (n-type) Si QD/(p-type) c-Si photovoltaic devices is an encouraging step towards the realization of all-silicon tandem solar cells based on Si QD materials.

https://iopscience.iop.org/article/10.1088/0957-4484/19/24/245201/pdf

Eun-Chel Cho

Papers

Silicon nanostructures for third generation photovoltaic solar cells

Silicon quantum dot nanostructures for tandem photovoltaic cells

Silicon quantum dot/crystalline silicon solar cells.

Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices

Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells