Christian Dellen

TL;DR: In this article, a new design principle is introduced, based on co-sintering crystalline LCO and Ta-substituted LLZO, which allows the fabrication of high specific areal density and low cell area resistance without the interface modification.

TL;DR: In this article, the deposition of Ta- and Al-substituted Li7La3Zr2O12 (LLZ) thin films on stainless steel substrates by r.f. magnetron sputtering was shown.

TL;DR: In this article, thin-film technologies open a pathway for manufacturing compounds of electrolyte and active material at lower processing temperatures, which are especially applicable for electrolyte layers since electrolytes require a high density while at the same time their thickness can be as thin as possible, provided that the separation of the electrodes is still guaranteed.

TL;DR: In this article, the authors measured the time evolution of the resistance of amorphous thin films of the phase change materials Ge2Sb2Te5, GeTe and AgIn-Sb 2Te and found that the dominating contribution to the increase in resistance during annealing can be either a change in activation energy (Ge2 Sb 2 Te5) or a change of prefactor (AgIn Sb2 Te).

TL;DR: In this paper, a detailed focus is given on: (i) anode ceramic materials, (ii) cathode active materials, and (iii) separators and solid electrolytes.