C
Christopher D. Nordquist
Researcher at Pennsylvania State University
Publications - 14
Citations - 1062
Christopher D. Nordquist is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Molecular beam epitaxy & Vertical-cavity surface-emitting laser. The author has an hindex of 4, co-authored 14 publications receiving 1044 citations.
Papers
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Journal ArticleDOI
Electric-field assisted assembly and alignment of metallic nanowires
Peter A. Smith,Christopher D. Nordquist,Thomas N. Jackson,Theresa S. Mayer,Benjamin R. Martin,Jeremiah K. N. Mbindyo,Thomas E. Mallouk +6 more
TL;DR: In this paper, an electric-field assisted assembly technique was used to position individual nanowires suspended in a dielectric medium between two electrodes defined lithographically on a SiO2 substrate.
Patent
Electro-fluidic assembly process for integration of electronic devices onto a substrate
TL;DR: An electro-fluidic assembly process for integration of an electronic device or component onto a substrate which comprises: disposing components within a carrier fluid; attracting the components to an alignment sites on the substrate by means of electrophoresis or dielectrophoreis; and aligning the components within the alignment site by means, energy minimization.
Proceedings ArticleDOI
An electro-fluidic assembly technique for integration of III-V devices onto silicon
TL;DR: In this paper, an electro-fluidic assembly approach for III-V device integration is presented. But the authors focus on a low-cost, parallel heterogeneous integration process suitable for 3-V devices.
Journal ArticleDOI
GaAs/AlGaAs heterojunction bipolar transistors with a base doping 1020 cm−3 grown by solid-source molecular beam epitaxy using CBr4
M. Micovic,Christopher D. Nordquist,Dmitri Lubyshev,Theresa S. Mayer,David L. Miller,R. W. Streater,A. J. SpringThorpe +6 more
TL;DR: In this paper, the authors showed that epitaxial layers suitable for fabrication of AlGaAs/GaAs heterojunction bipolar transistors with a carbon base doping level of up to 1020 cm−3 can be grown by solid-source molecular beam epitaxy using CBr4 as a doping precursor.
Journal ArticleDOI
Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth
M. Micovic,Christopher D. Nordquist,Dmitri Lubyshev,Theresa S. Mayer,David L. Miller,R. W. Streater,A. J. SpringThorpe +6 more
TL;DR: In this article, a process for fabrication of heterojunction bipolar transistors (HBTs) with selectively buried subcollectors by molecular beam epitaxy (MBE) regrowth is described.