We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

http://science.sciencemag.org/content/sci/300/5623/1269.full.pdf

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group

With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 1019-1020 cm−3 the electron mobili ty was 12-20 cm2 V−1 s−1 showing no p n anomaly between Hall and Seebeck coefficients. The conductivity displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The...

Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor

Quantitative analysis of the elemental composition of specimens with scanning electron microscopy/energy dispersive x-ray spectroscopy (SEM/EDS) requires specimens to meet a set of conditions to ensure specimen geometry does not induce errors. In particular, for accurate quantitative EDS analysis, the specimen surface must be sufficiently flat and orthogonal to the SEM’s electron beam [1, 2]. In this presentation, we report the development and validation of a method for orienting sufficiently flat microscale surfaces, invisible to the naked eye, in the SEM such that the surface is orthogonal to the incoming electron beam. The method is based on using multiple SEM images to measure the change in distance between two points, the line between which is perpendicular to the SEM tilting axis, on images of different tilt angles. As the method utilizes multiple SEM images and measurements, it provides a good testing ground for tools being used in our current efforts to develop and statistically analyze a specimen orientation procedure more efficient and precise than previous methods

Development and Validation of In-Situ Specimen Orientation Method for Quantitative SEM/EDS Analysis


 Quantitative analysis methods based on the usage of a scanning electron microscope (SEM), such as energy-dispersive X-ray spectroscopy, often require specimens to have a flat surface oriented normal to the electron beam. In-situ procedures for putting microscopic flat surfaces into this orientation generally rely on stereoscopic methods that measure the change in surface vector projections when the surface is tilted by some known angle. Although these methods have been used in the past, there is no detailed statistical analysis of the uncertainties involved in such methods, which leaves an uncertainty in how precisely a specimen can be oriented. Here, we present a first principles derivation of a specimen orientation method and apply our method to a flat sample to demonstrate it. Unlike previous works, we develop a computer vision program using the scale-invariant feature transform to automate and expedite the process of making measurements on our SEM images, thus enabling a detailed statistical analysis of the method with a large sample size. We find that our specimen orientation method is able to orient flat surfaces with high precision and can further provide insight into errors involved in the standard SEM rotation and tilt operations.

Computer Vision Applied to In-Situ Specimen Orientation Adjustment for Quantitative SEM Analysis

Application of electron backscatter diffraction in facet crystalline orientation study of Al-Cu-Fe alloy

The surface of a crystal is often enclosed with facets, which are planes smooth down to atomic level Overall, it is known that the formation is to minimize surface energy, which means that a crystal will take a shape that maximizes the portion of crystalline planes of low surface energy. Therefore, information about the crystalline orientation of a facet gives us an insight about a specific crystal structure. Further, facets affect the performance of some materials, such as the chemical activity of catalysts This is especially true for nano- and micro- particles, where the increased surface area means stronger driving force in forming crystals with shapes corresponding to equilibrium. The crystalline orientation of facets can be determined by simple morphology observation and by relating the orientation of facets with crystal structure. The first approach tends to be a speculation based on previous knowledge. This approach is widely used in examining crystals of macroscale. As examples for the second approach, there are reports about the characterization of nanoparticles using Transmission Electron Microscope (TEM) TEM is an excellent tool to study nanoparticles, when specimen preparation can be accomplished by simple dispersion. When a particle is in micrometer order, there is challenge in specimen preparation. The combination of Scanning Electron Microscope (SEM) and Electron Back Scattering Diffraction (EBSD) is believed to be an effective tool in this case. This paper reports our results in expanding the application of SEM-EBSD in this field. The facet that has been studied is on spherical particles found in alloy 65 Cu 25 Fe 15 by arc melting. The spherical particle as A

Application of Electron Back Scattering Diffraction in Facet Crystalline Orientation Analysis

The modulated structures of In(InxM1-x)O3(Zn0)m have been studied by HRTEM. Superspace groups of the modulated structure for In(In0.5Al0.5)O3(ZnO)13 and In(In0.5Fe0.5)O3(ZnO)13 are assigned as B1Bmhttps://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003063056/c87f8d57-bd6e-40f8-a651-90760b6f3961/content/ieq0215.tif"/> and PP1¯1https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003063056/c87f8d57-bd6e-40f8-a651-90760b6f3961/content/ieq0216.tif"/>, respectively. It is shown that the periodicities of the modulation waves are about 7.4 nm and 5.9 nm for In(In0.5Fe0.5)O3(ZnO)13 and In(In0.5Fe0.5)O3(ZnO)13, respectively, where these values are located between those for In(In0.5Fe0.5)O3(ZnO)m and InMO3(ZnO)m. The electron diffraction patterns are well interpreted based on a superspace group description. 

Chunfei Li

Papers

Development and Validation of In-Situ Specimen Orientation Method for Quantitative SEM/EDS Analysis

Computer Vision Applied to In-Situ Specimen Orientation Adjustment for Quantitative SEM Analysis

Application of electron backscatter diffraction in facet crystalline orientation study of Al-Cu-Fe alloy

Application of Electron Back Scattering Diffraction in Facet Crystalline Orientation Analysis

A superspace group of the modulated structure in homologous compounds In(InxM1-x)O3(ZnO)m