An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Light-emitting device

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

Indium oxide-based thin film transistors and circuits

Results on indium-oxide-based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large on-state current. Fabricating oxide TFTs on temperature-sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.

15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.

Metal oxynitride thin film transistors and circuits

Thin film transistors and arrays having controlled threshold voltage and improved I ON /I OFF ratio are provided in this invention. In one embodiment, a thin film transistor having a first gate insulator of high breakdown field with positive fixed charges and a second gate insulator with negative fixed charges is provided; said negative fixed charges substantially compensate said positive fixed charges in order to reduce threshold voltage and OFF state threshold voltage of said transistor. In another embodiment, a thin film transistor having a first passivation layer with negative fixed charges is provided, the negative charges reduce substantially unwanted negative charges in the adjacent active channel and hence reduce the OFF state current and increase I ON /I OFF ratio, which in turn reduce the threshold voltage of the transistor.

Thin film transistors and arrays

The invention provides an adjustable film body acoustic wave resonator and filter, and relates to the characteristics of junction related with the semiconductor piezoelectric structure. By adjusting the applied direct current bias, the semiconductor piezoelectric structure comprising a controlled doping concentration is changed so as to make the central frequency or bandwidth of the resonator become adjustable, and thus the tunable microwave acoustic filter and tunable oscillator can be applied to microwave application.

Cindy X. Qiu

Papers

Indium oxide-based thin film transistors and circuits

15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

Metal oxynitride thin film transistors and circuits

Thin film transistors and arrays

Adjustable film body acoustic wave resonator and filter