An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

An electro-optic display, having at least one pixel capable of achieving any one of at least four different gray levels including two extreme optical states, is driven by displaying a first image on the display, and rewriting the display to display a second image thereon, wherein, during the rewriting of the display, any pixel which has undergone a number of transitions exceeding a predetermined value without touching an extreme optical state, is driven to at least one extreme optical state before driving that pixel to its final optical state in the second image.

Methods for driving electro-optic displays

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.

Semiconductor display device

Results on indium-oxide-based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large on-state current. Fabricating oxide TFTs on temperature-sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.

15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

The present invention in one aspect relates to a solar cell formed on a substrate, a bottom electrode member formed on the solar cell, an electrophoretic display panel formed on the bottom electrode member, having a plurality of electrophoretic cell structures spatially arranged in a matrix form, each electrophoretic cell structure containing a plurality of charged particles movable in the electrophoretic cell structure responsively to applied fields, and a top electrode member formed on the electrophoretic display panel, where at least one of the bottom electrode member and the top electrode member includes a plurality of in-plane switching (IPS) electrodes. Each IPS electrode is positioned in relation to a corresponding electrophoretic cell structure for controlling movements of the charged particles therein along a horizontal direction parallel to the electrophoretic display panel.

Electrophoretic display device

A novel integrated ambient light sensor using nanocrystalline silicon fabricated using low-temperature polysilicon technology has been developed on a display panel. The photosensing structure of the silicon nanocrystals embedded in a dielectric film sandwiched between the bottom metal and top indium-thin-oxide electrodes perfectly eliminates backlight noise, which is a problem typical of conventional p-i-n photodiodes integrated into a liquid-crystal display. Experimental results indicate that the Si-nanocrystal photosensor has better performances in dark current and quantum efficiency than those of the p-i-n diode. The Si-nanocrystal photosensor also exhibited response linearity and speed comparable to the p-i-n diode. In terms of long-term operation and reliability, the lifetime of the Si-nanocrystal photosensor is roughly two orders longer than that of the p-i-n diode. The Si-nanocrystal ambient light sensor has considerable flexibility in the design of spectrum, geometry, and the readout circuit, which is achieved by adjusting the nanocrystal size and applying a vertical stacking structure. The Si-nanocrystal photosensor can be a promising low-cost PMOS-only solution for various photosensing applications on display panels.

Integrated Ambient Light Sensor With Nanocrystalline Silicon on a Low-Temperature Polysilicon Display Panel

42‐3L: Late‐News Paper: Development of Crystalline IGZO and LTPS Hybrid TFTs Array Technology

A display panel having a pixel region and a sensing region includes a first substrate, a second substrate and a display medium layer. A plurality of pixel structures and at least one photo-voltaic cell device are disposed on the first substrate. The pixel structures are arranged in the pixel region in array, and each of the pixel structures includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The photo-voltaic cell device disposed in the sensing region includes a doped semiconductor layer, a transparent electrode layer, a first type doped silicon-rich dielectric layer and a second type doped silicon-rich dielectric layer. The first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer. The display medium layer is disposed between the first substrate and the second substrate.

Wei-Ming Huang

Papers

15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

Electrophoretic display device

Integrated Ambient Light Sensor With Nanocrystalline Silicon on a Low-Temperature Polysilicon Display Panel

42‐3L: Late‐News Paper: Development of Crystalline IGZO and LTPS Hybrid TFTs Array Technology

Thin film transistor array substrate, display panel, liquid crystal display apparatus and manufacturing method thereof