D. Adam

TL;DR: In this article, a solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy, and submicron finger spacings were obtained by electron-beam lithography, and demonstrated a significant improvement of the responsivity and spectral selectivity.

TL;DR: In this article, the properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented, and both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability.

TL;DR: In this article, a high electron mobility transistor (HEMT) with 0.5 µm gate length and a maximum extrinsic transconductance of 160 µmS/mm and drain-source current exceeding 600 µmA/mm is presented.

TL;DR: In this paper, the authors presented the characterization and performance of a solar blind metal-semiconductor-metal detector with a noise equivalent power as low as 30 fW at 280 nm.

TL;DR: In this article, a comparison between pulsed I-V at different temperature and DC measurements of AlGaN/GaN HEMTs grown on two different substrates: sapphire and silicon is presented.