D
D. B. Eason
Researcher at State University of New York System
Publications - 34
Citations - 2261
D. B. Eason is an academic researcher from State University of New York System. The author has contributed to research in topics: Molecular beam epitaxy & Light-emitting diode. The author has an hindex of 16, co-authored 33 publications receiving 2166 citations. Previous affiliations of D. B. Eason include University at Buffalo & North Carolina State University.
Papers
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Journal ArticleDOI
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
TL;DR: An N-doped p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating, N-O substrate as discussed by the authors.
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Production of nitrogen acceptors in ZnO by thermal annealing
N. Y. Garces,Nancy C. Giles,Larry E. Halliburton,G. Cantwell,D. B. Eason,D. C. Reynolds,David C. Look +6 more
TL;DR: A photo-induced EPR signal due to neutral nitrogen acceptors was observed when the annealed crystals were exposed to laser light (e.g., 364, 442, 458, or 514 nm) at low temperature as discussed by the authors.
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Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal
TL;DR: In this article, a high-quality bulk ZnO single crystal was resolved at 8 K by means of polarized photoreflectance (PR) and photoluminescence measurements.
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High‐brightness blue and green light‐emitting diodes
D. B. Eason,Z. Yu,W. C. Hughes,W. H. Roland,C. Boney,J. W. Cook,J. F. Schetzina,Gene Cantwell,W.C. Harsch +8 more
TL;DR: In this article, high-brightness blue and green light-emitting diodes (LEDs) based on II-VI heterostructures grown by molecular beam epitaxy on ZnSe substrates were reported.
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Molecular nitrogen (N2−) acceptors and isolated nitrogen (N−) acceptors in ZnO crystals
TL;DR: In this article, a five-line EPR spectrum was observed at low temperature in the as-grown bulk crystals and is assigned to N2− molecules substituting for oxygen, with the unique directions parallel to the c axis.