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Infrared detectors: status and trends

Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR) imaging system applications: linear arrays for scanning systems (first generation) and two-dimensional arrays for staring systems (second generation). Nowadays, third-generation IR systems are being developed which, in the common understanding, provide enhanced capabilities such as larger numbers of pixels, higher frame rates, better thermal resolution, multicolor functionality, and/or other on-chip signal-processing functions. In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed. In this class of detectors the two main competitors, HgCdTe photodiodes and quantum-well photoconductors, are considered. This is followed by discussions focused on the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors. The main challenges facing multicolor devi...

Third-generation infrared photodetector arrays

The paper compares the achievements of quantum well infrared photodetector (QWIP) technology with those of competitive technologies, with the emphasis on the material properties, device structure, and their impact on focal plane array (FPA) performance. Special attention is paid to two competitive technologies, QWIP and HgCdTe, in the long-wavelength IR (LWIR) and very-long-wavelength IR (VLWIR) spectral ranges. Because so far, the dialogue between the QWIP and HgCdTe communities is limited, the paper attempts to settle the main issues of both technologies. Such an approach, however, requires the presentation of fundamental limits to the different types of detectors, which is made at the beginning. To write the paper more clearly for readers, many details are included in the Appendix. In comparative studies both photon and thermal detectors are considered. Emphasis is placed on photon detectors. In this group one may distinguish HgCdTe photodiodes, InSb photodiodes, and doped silicon detectors. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation rate. It is demonstrated that LWIR QWIP’s cannot compete with HgCdTe photodiodes as single devices, especially at higher operating temperatures (>70 K). This is due to the fundamental limitations associated with intersubband transitions. The advantage of HgCdTe is, however, less distinct at temperatures lower than 50 K due to problems inherent in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though QWIP is a photoconductor, several of its properties, such as high impedance, fast response time, long integration time, and low power consumption, comply well with the requirements imposed on the fabrication of large FPA’s. Due to a high material quality at low temperatures, QWIP has potential advantages over HgCdTe in the area of VLWIR FPA applications in terms of array size, uniformity, yield, and cost of the systems. The performance figures of merit of state-of-the-art QWIP and HgCdTe FPA’s are similar because the main limitations come from the readout circuits. Performance is, however, achieved with very different integration times. The choice of the best technology is therefore driven by the specific needs of a system. In the case of readout-limited detectors a low photoconductive gain increases the signal-to-noise ratio and a QWIP FPA can have a better noise equivalent difference temperature than an HgCdTe FPA with a charge well of similar size. Both HgCdTe photodiodes and QWIP’s offer multicolor capability in the MWIR and LWIR range. Powerful possibilities offered by QWIP technology are associated with VLWIR FPA applications and with multicolor detection. The intrinsic advantage of QWIP’s in this niche is due to the relative ease of growing multicolor structures with a very low defect density.

Quantum well photoconductors in infrared detector technology

A quantum-well infrared photodetector (QWIP) based on the corrugated light-coupling scheme has been fabricated and tested for remote temperature sensing. The QWIP consists of two stacks of multiple quantum wells (MQWs), each sensitive in one of the atmospheric infrared transmission windows and each with a separate readout circuit. High optical coupling efficiency is obtained in both wavelength ranges, demonstrating the use of the corrugated structure for two-color detection. By monitoring the ratio of the photocurrent generated simultaneously in each MQW stack, the temperature of the object emitting the radiation can be determined, regardless of its emissivity and the geometrical factors. This temperature sensing ability is tested by using a blackbody radiator with precision temperature control as the target. The agreement between the measured and the preset temperatures indicates that the corrugated QWIP is capable of precision thermometric measurements.

Two-color corrugated quantum-well infrared photodetector for remote temperature sensing

A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing intersubband electron transitions and tunneling injection electrons. The dark current and the responsivity are derived as functions of the QWIP parameters, including the number of the QWs, in an analytical form. Nonlinear effects in the QWIP operation at high infrared power are considered and the threshold value of power density is estimated.

Characteristics of quantum well infrared photodetectors

In this letter, we report a quantum well infrared photodetector geometry for normal incidence light coupling. The new optical coupling scheme utilizes total internal reflection at the sidewalls of triangular wires to create favorable optical polarization for infrared absorption. These wires are created by chemically etching an array of V grooves through the detector active region along a specific crystallographic direction. Experimental results from the initial single color as well as two‐color detectors with linear wires and unthinned substrate show efficient light coupling comparable to the standard 45° edge coupling, without the undesirable wavelength dependence or spectral narrowing effect of a conventional grating structure. At the same time, the dark current density is substantially reduced due to the partial material removal. Further improvement is expected by creating a two‐dimensional coupling structure with substrate thinning.

D. C. Tsui

Papers

Corrugated quantum well infrared photodetectors for normal incident light coupling