We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

A multilayer photonic structure is described that strongly reflects incident sunlight while emitting heat selectively through an atmospheric transparency window to outer space; this leads to passive cooling under direct sunlight of 5 degrees Celsius below ambient air temperature, which has potential applications in air-conditioning and energy efficiency.

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Passive radiative cooling below ambient air temperature under direct sunlight

Random-matrix theories in quantum physics : common concepts

We review the development of random-matrix theory (RMT) during the last decade. We emphasize both the theoretical aspects, and the application of the theory to a number of fields. These comprise chaotic and disordered systems, the localization problem, many-body quantum systems, the Calogero-Sutherland model, chiral symmetry breaking in QCD, and quantum gravity in two dimensions. The review is preceded by a brief historical survey of the developments of RMT and of localization theory since their inception. We emphasize the concepts common to the above-mentioned fields as well as the great diversity of RMT. In view of the universality of RMT, we suggest that the current development signals the emergence of a new "statistical mechanics": Stochasticity and general symmetry requirements lead to universal laws not based on dynamical principles.

Random Matrix Theories in Quantum Physics: Common Concepts

Weak localization in thin films: a time-of-flight experiment with conduction electrons

We demonstrate a novel 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs. Intersubband resonance radiation excites an electron from the ground state into the first excited state, where it rapidly tunnels out producing a photocurrent. We achieve a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.

New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

We have measured the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices. Waveguide geometry experiments demonstrate strong absorption with 95% of the incident infrared energy being absorbed.

Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain.

The emission and detection of electromagnetic radiation are essential optical processes that govern performance of lasers, detectors and solar cells. Through light-photonic crystal interaction, a three-dimensional (3D) photonic crystal offers a way to alter such optical processes. Experimental realization is done by building a thin slab of 3D photonic crystal onto a silicon material. The 3D crystal structure is found to be highly effective in suppressing silicon thermal radiation in the photonic band gap spectral regime. Emission is also enhanced in the photonic passbands. At passband resonant frequencies, a thin slab of 3D photonic crystal actually acts like a planar blackbody.

Enhancement and suppression of thermal emission by a three-dimensional photonic crystal

We have achieved a high responsivity, R=1.9 A/W, 10 μm infrared detector using intersubband absorption in GaAs/AlxGa1−xAs quantum well superlattices. The photocurrent is produced by intersubband absorption followed by efficient photoexcited tunneling. This responsivity is nearly four times higher than our previous results and has been obtained by using thicker and higher AlxGa1−xAs superlattice barriers thereby reducing the dark current and allowing the detector to be operated at higher biases.

Kwong-Kit Choi

Papers

New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain.

Enhancement and suppression of thermal emission by a three-dimensional photonic crystal

Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity