Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

An electric-probe method for the diagnostics of electron-distribution functions (EDFs) in plasmas is reviewed with emphasis on receiving reliable results while taking into account appropriate probe construction, various measurement errors and the limitations of theories. The starting point is a discussion of the Druyvesteyn method for measurements in weakly ionized, low-pressure and isotropic plasma. This section includes a description of correct probe design, the influence of circuit resistance, ion current and plasma oscillations and probe-surface effects on measurements. At present, the Druyvesteyn method is the most developed, consistent and routine way to measure the EDF. The following section of the review describes an extension of the classical EDF measurements into higher pressures, magnetic fields and anisotropic plasmas. To date, these methods have been used by a very limited number of researchers. Therefore, their verification has not yet been fully completed, and their reliable implementation still requires additional research. Nevertheless, the described methods are complemented by appropriate examples of measurements demonstrating their potential value.

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Probe measurements of electron-energy distributions in plasmas: what can we measure and how can we achieve reliable results?

Revisiting MOSFET threshold voltage extraction methods

Foreword.- Introduction.- Status of heterojunction solar cell R&D.- Basic features of Heterojunctions illustrated by selected experimental methods and results.- Deposition methods of thin film silicon.- Electronic properties of ultrathin a-Si:H layers and the a-Si:H/c-Si interface.- Degradation of (bulk and thin film) a-Si and interface passivation.- Photoluminescence and electroluminescence for a Si:H/c Si device and interface characterization.- Deposition and properties of transparent conductive oxides.- Metallization and formation of contacts.- Electrical and optical characterization of a-Si:H/c Si cells.- Wet-chemical pre-treatment of c Si for a-Si:H/c-Si heterojunctions.- Theory of heterojunctions and the determination of band offsets from electrical measurements.- Modeling and simulation of a Si:H/c Si cells.- Surface passivation using ALD Al2O3.- Introduction to AFORS-HET.- Hands-on experience with simulation tools.- a-Si:H/c-Si heterojunction and other high efficiency solar cells: a comparison.- Rear contact cells.- Progress in systematic industrialization of Hetero-Junction-based Solar Cell technology.

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

Efficient deposition of high-quality coatings often requires controlled application of excited or ionized particles. These particles are either condensing (film-forming) or assisting by providing energy and momentum to the film growth process, resulting in densification, sputtering/etching, modification of stress, roughness, texture, etc. In this review, the technical means are surveyed enabling large area application of ions and plasmas, with ion energies ranging from a few eV to a few keV. Both semiconductortype large area (single wafer or batch processing with {approx} 1000 cm{sup 2}) and in-line web and glass-coating-type large area (> 10{sup 7} m{sup 2} annually) are considered. Characteristics and differences between plasma and ion sources are explained. The latter include gridded and gridless sources. Many examples are given, including sources based on DC, RF, and microwave discharges, some with special geometries like hollow cathodes and E x B configurations.

https://facades.lbl.gov/sites/all/files/57127.pdf

Plasma and Ion Sources in Large Area Coatings: A Review

Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures

Deposition of pure and Ge-doped silica as well as silicon oxynitride films has been studied in a recently developed matrix distributed electron cyclotron resonance (MDECR) reactor. Process parameters were optimized in order to obtain optical quality thin films at low substrate temperatures and high deposition rates without post-deposition treatment. The choice of injection system is shown to be of crucial importance for the deposition of high quality materials in low pressure PECVD. It has been found that injecting silane near the surface allows to obtain films with a low OH absorption independently of silane flow i.e. growth rate in a certain range of process parameters. On the contrary, in the case of uniform distribution of silane in the reactor volume the hydrogen content increases with silane flow, which affects the quality of films deposited at higher rates. With the optimized injection system, stress-free silica films with a low absorption have been deposited at the rates up to 70 nm/min at temperatures lower than 150 °C. Non-absorbing oxynitride films with a controllable refractive index ranging from 1.46 to 1.86 have been obtained from SiH 4 /O 2 /N 2 mixtures. Ge-doped silica films with a Ge content of up to 4% has been deposited using a mixture GeH 4 in H 2 as a dopant. The properties of deposited films have been studied as a function of process parameters. The results show that the MDECR concept, that permits, in principle, unlimited scaling of substrate size, can be technology of choice for the deposition of optical thin films and functional coatings.

High density plasma enhanced chemical vapor deposition of optical thin films

Temperature dependence of the optical functions of amorphous silicon-based materials: application to in situ temperature measurements by spectroscopic ellipsometry

Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance

A range of silicon-based optical thin films have been deposited in a matrix distributed electron cyclotron resonance (MDECR) reactor. Process parameters were optimized in order to obtain optical quality thin films at low substrate temperatures and high deposition rates without post-deposition treatment. Stoichiometric silica films have been deposited at the rates up to 70 nm/min at temperatures lower than 150 °C. Oxynitride films with a controllable refractive index ranging from 1.46 to 1.86 have been obtained from SiH 4 /O 2 /N 2 mixtures. Real time process control by multichannel ellipsometry has been implemented and successfully applied for the deposition of silica, silicon oxynitrides and amorphous silicon. Better than 0.3% in thickness accuracy was achieved in high rate deposition of silica layers of various predefined thickness. Refractive indices were determined in real-time with an absolute precision of 0.005-0.02. The control algorithm was used for fabrication of multilayer optical filters. The results show that the MDECR concept coupled with real-time process control by ellipsometry can be technology of choice for the deposition of interference coatings.

D. Daineka

Papers

Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures

High density plasma enhanced chemical vapor deposition of optical thin films

Temperature dependence of the optical functions of amorphous silicon-based materials: application to in situ temperature measurements by spectroscopic ellipsometry

Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance

Control and monitoring of optical thin films deposition in a Matrix Distributed Electron Cyclotron Resonance reactor