P
P. Roca i Cabarrocas
Researcher at École Polytechnique
Publications - 394
Citations - 7475
P. Roca i Cabarrocas is an academic researcher from École Polytechnique. The author has contributed to research in topics: Silicon & Amorphous silicon. The author has an hindex of 43, co-authored 374 publications receiving 7211 citations. Previous affiliations of P. Roca i Cabarrocas include Princeton University & Centre national de la recherche scientifique.
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A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition
TL;DR: In this paper, a radio frequency glow discharge system for the deposition of amorphous thin-film semiconductors and insulators is presented, which is a multiplasma monochamber system consisting of three separated plasma chambers located inside the same isothermal vacuum vessel.
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Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements
TL;DR: In this article, the tetrahedron model was used to determine the hydrogen content, the crystalline fraction, and the void fraction of amorphous and polymorphous silicon films from UV-visible spectroscopic ellipsometry measurements.
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Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films
TL;DR: In this article, the growth of microcrystalline silicon films produced by the layer-by-layer and standard hydrogen dilution techniques is studied, and it is shown that subsurface reactions play a key role, particularly during the incubation phase where hydrogen is responsible for the formation of a porous layer in which nucleation takes place.
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Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences
TL;DR: In this paper, the results of an in situ spectroscopic ellipsometry study concerning the substrate dependence of the evolution of microcrystalline silicon films deposited by alternating amorphous silicon deposition and hydrogen plasma treatment were reported.
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Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment.
TL;DR: The results show that it is possible to increase the volume fraction of the crystalline phase by reducing the deposition time within one cycle or by increasing the hydrogen plasma treatment time.