Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

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Gas-assisted focused electron beam and ion beam processing and fabrication

A high brightness plasma ion source has been developed to address focused ion beam (FIB) applications not satisfied by the liquid metal ion source (LMIS) based FIB. The plasma FIB described here is capable of satisfying applications requiring high mill rates (>100μm3∕s) with non-gallium ions and has demonstrated imaging capabilities with sub- 100-nm resolution. The virtual source size, angular intensity, mass spectra, and energy spread of the source have been determined with argon and xenon. This magnetically enhanced, inductively coupled plasma source has exhibited a reduced brightness (βr) of 5.4×103Am−2sr−1V−1, with a full width half maximum axial energy spread (ΔE) of 10eV when operated with argon. With xenon, βr=9.1×103Am−2sr−1V−1 and ΔE=7eV. With these source parameters, an optical column with sufficient demagnification is capable of forming a sub-25-nm spot size at 30keV and 1pA. The angular intensity of this source is nominally three orders of magnitude greater than a LMIS making the source more a...

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High brightness inductively coupled plasma source for high current focused ion beam applications

Focused ion beam (FIB) machines are key tools for state-of-the art sample preparation in electron microscopy, for characterization and repair in material sciences, for the semiconductor industry and for nanotechnology in general. Liquid-metal ion sources (LMIS) are widely used in FIB machines because they meet the minimum ion source requirements such as source brightness and reliability. However, in FIB machines, noble gas ion sources are favorable for sputtering, beam-induced etching and deposition, because the implanted ions do not change the electrical behavior of the substrate significantly. There are several efforts by various researchers to develop noble gas ion sources that can be used in FIB machines instead of LMIS. The gas ion sources could not meet the minimum ion source requirements. Therefore, LMIS are still a popular choice among FIB machine users. This review article takes a critical look at the reported efforts in the literature to develop noble gas ion sources for FIB machines.

Quest for high brightness, monochromatic noble gas ion sources

Introduction to Focused Ion Beams

Mini rf-driven ion sources with 1.2 cm and 1.5 cm inner chamber diameter have been developed at Lawrence Berkeley National Laboratory. Several gas species have been tested including argon, krypton, and hydrogen. These mini ion sources operate in inductively coupled mode and are capable of generating high current density ion beams at tens of watts of absorbed rf power. Since the plasma potential is relatively low in the plasma chamber, these mini ion sources can function reliably without any perceptible sputtering damage of the chamber wall. The mini rf-driven ion sources will be combined with electrostatic focusing columns, and are capable of producing nanofocused ion beams for micromachining and semiconductor fabrications.

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Mini rf-driven ion sources for focused ion beam systems

The multicusp plasma ion source has found many uses such as in ion implanters, ion projection lithography, and injectors for particle accelerators. This source is favorable for such applications because of its low ion temperature, small energy spread, and good stability. These properties also offer the tantalizing possibility of utilizing such a source to create a noncontaminating focused ion beam (FIB) system for semiconductor fabrication line use and advanced photomask repair applications. We have made measurements of the brightness of this ion source and have done some preliminary applications work with a Kr+-enabled FIB system for mask repair and ion milling. A specially designed multicusp plasma ion source has been used to measure focused beam spot size versus current relationships for several inert gas ion species. From these data the axial brightness of the ion source was ascertained. For the extraction of Kr+ from the source we find an angular intensity of 12 μA/sr and a virtual source size of 16....

D. Ferranti

Papers

Performance of multicusp plasma ion source for focused ion beam applications