Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

The increasing human need for clean and renewable energy has stimulated research in artificial photosynthesis, and in particular water photoelectrolysis as a pathway to hydrogen fuel. Nanostructured devices are widely regarded as an opportunity to improve efficiency and lower costs, but as a detailed analysis shows, they also have considerably disadvantages. This article reviews the current state of research on nanoscale-enhanced photoelectrodes and photocatalysts for the water splitting reaction. The focus is on transition metal oxides with special emphasis of Fe2O3, but nitrides and chalcogenides, and main group element compounds, including carbon nitride and silicon, are also covered. The effects of nanostructuring on carrier generation and collection, multiple exciton generation, and quantum confinement are also discussed, as well as implications of particle size on surface recombination, on the size of space charge layers and on the possibility of controlling nanostructure energetics via potential determining ions. After a summary of electrocatalytic and plasmonic nanostructures, the review concludes with an outlook on the challenges in solar fuel generation with nanoscale inorganic materials.

Inorganic nanostructures for photoelectrochemical and photocatalytic water splitting

Aqueous HF etching of silicon surfaces results in the removal of the surface oxide and leaves behind silicon surfaces terminated by atomic hydrogen. The effect of varying the solution pH on the surface structure is studied by measuring the SiH stretch vibrations with infrared absorption spectroscopy. Basic solutions ( pH=9–10) produce ideally terminated Si(111) surfaces with silicon monohydride ( 3/4 SiH) oriented normal to the surface. The surface is found to be very homogeneous with low defect density (<0.5%) and narrow vibrational linewidth (0.95 cm−1 ).

Ideal hydrogen termination of the Si (111) surface

Surface infrared spectroscopy

With a global market share of about 90%, crystalline silicon is by far the most important photovoltaic technology today. This article reviews the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective. First, it discusses key factors responsible for the success of the classic dopant-diffused silicon homojunction solar cell. Next it analyzes two archetypal high-efficiency device architectures – the interdigitated back-contact silicon cell and the silicon heterojunction cell – both of which have demonstrated power conversion efficiencies greater than 25%. Last, it gives an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrier-selective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic–inorganic perovskite materials.

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High-efficiency crystalline silicon solar cells: status and perspectives

We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.

D. L. Allara

Papers

Unusually low surface-recombination velocity on silicon and germanium surfaces.