This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified theory is employed to obtain a starting design. This design is then modified to achieve higher efficiency operation as specific device limitations are reached in large-signal (computer) operation. Self-consistent numerical solutions are obtained for equations describing carrier transport, carrier generation, and space-charge balance. The solutions describe the evolution in time of the diode and its associated resonant circuit. Detailed solutions are presented of the hole and electron concentrations, electric field, and terminal current and voltage at various points in time during a cycle of oscillation. Large-signal values of the diode's negative conductance, susceptance, average voltage, and power-generating efficiency are presented as a function of oscillation amplitude for a fixed average current density. For the structure studied, the largest microwave power-generating efficiency (18 percent at 9.6 GHz) has been obtained at a current density of 200 A/cm2, but efficiencies near 10 percent were obtained over a range of current density from 100 to 1000 A/cm2.

Large-signal analysis of a silicon Read diode oscillator

Equations are presented which fit the experimental dependence of carrier mobilities on doping density and field strength in silicon. The curve-fitting procedures are described.

Carrier mobilities in silicon empirically related to doping and field

This paper reviews the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices. Therefore, most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties. Phenomenological expressions are given, when possible, for the most important transport quantities as functions of temperature, field or impurity concentration. The discussion is limited to bulk properties, with only a few comments on surface transport.

A review of some charge transport properties of silicon

We give a relation which links emitter and collector junction voltages, V eb and V eb , collector current I c , and the total charge Q b of carriers that enter through the base terminal (electrons in a pnp transistor): $I_{c} = const{e^(aV_{eb / kT}) - e^(aV_{eb / kT})\over Q_{b}}.$ This relation is valid for high injection conditions, subject only to minor restrictions. The significance for device modeling is discussed.

A charge control relation for bipolar transistors

Charge carrier drift velocities in semiconductor materials suitable for solid state detectors has been reviewed. Si, Ge, CdTe and GaAs are considered. New data for HgI2 recently obtained are also reported. The data cover a large range of temperatures (6-430 K) and electric fields up to 50 KV/cm. An anisotropy effect in the drift velocity obtained by applying the electric field parallel to different crystallographic axis is also discussed for the case of Si and Ge.

D.L. Scharfetter

Papers

Dependence of hole velocity upon electric field and hole density for p-type silicon