International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

After dominating the electronics industry for decades, silicon is on the verge of becoming the material of choice for the photonics industry: the traditional stronghold of III-V semiconductors. Stimulated by a series of recent breakthroughs and propelled by increasing investments by governments and the private sector, silicon photonics is now the most active discipline within the field of integrated optics. This paper provides an overview of the state of the art in silicon photonics and outlines challenges that must be overcome before large-scale commercialization can occur. In particular, for realization of integration with CMOS very large scale integration (VLSI), silicon photonics must be compatible with the economics of silicon manufacturing and must operate within thermal constraints of VLSI chips. The impact of silicon photonics will reach beyond optical communication-its traditionally anticipated application. Silicon has excellent linear and nonlinear optical properties in the midwave infrared (IR) spectrum. These properties, along with silicon's excellent thermal conductivity and optical damage threshold, open up the possibility for a new class of mid-IR photonic devices

Silicon Photonics

Aspects of the subject disclosure may include, for example, receiving, by a feed point of a dielectric antenna, electromagnetic waves from a dielectric core coupled to the feed point without an electrical return path, where at least a portion of the dielectric antenna comprises a conductive surface, directing, by the feed point, the electromagnetic waves to a proximal portion of the dielectric antenna, and radiating, via an aperture of the dielectric antenna, a wireless signal responsive to the electromagnetic waves being received at the aperture. Other embodiments are disclosed.

Method and apparatus for coupling an antenna to a device

A distributed antenna system is provided that frequency shifts the output of one or more microcells to a 60 GHz or higher frequency range for transmission to a set of distributed antennas. The cellular band outputs of these microcell base station devices are used to modulate a 60 GHz (or higher) carrier wave, yielding a group of subcarriers on the 60 GHz carrier wave. This group will then be transmitted in the air via analog microwave RF unit, after which it can be repeated or radiated to the surrounding area. The repeaters amplify the signal and resend it on the air again toward the next repeater. In places where a microcell is required, the 60 GHz signal is shifted in frequency back to its original frequency (e.g., the 1.9 GHz cellular band) and radiated locally to nearby mobile devices.

Remote distributed antenna system

Aspects of the subject disclosure may include, for example, a device that facilitates transmitting electromagnetic waves along a surface of a wire that facilitates delivery of electric energy to devices, and sensing a condition that is adverse to the electromagnetic waves propagating along the surface of the wire. Other embodiments are disclosed.

Method and apparatus for sensing a condition in a transmission medium of electromagnetic waves

A radio frequency identification (RFID) device and method of fabrication are presented. The RFID device includes an RFID antenna, a capacitor, and an RFID integrated circuit. The RFID antenna includes an elongate conductive trace disposed within an antenna area of the RFID device, and the capacitor includes an elongate capacitive structure for storing power. The elongate capacitive structure is aligned with the elongate conductive trace and embedded within the antenna area of the RFID device. The RFID integrated circuit is electrically coupled to the RFID antenna and to the capacitor, and the capacitor stores power within the antenna area of the RFID device to facilitate RFID integrated circuit functionality.

Circuit structure and method of fabrication for facilitating radio frequency identification (RFID)

An apparatus includes a substrate package and a three dimensional (3D) antenna structure formed in the substrate package. The 3D antenna structure includes multiple substructures to enable the 3D antenna structure to operate as a beam-forming antenna. Each of the multiple substructures has a slanted-plate configuration or a slanted-loop configuration.

Three dimensional (3d) antenna structure

A complementary LC-VCO is integrated in a 65nm SOI process and is statistically characterized on a 300mm wafer. Average center frequency is 67.9GHz and frequency tuning range is 6.14GHz or 9.05%. It achieves a phase noise of -106dBc/Hz at 10MHz offset and consumes 5.37mW from a 1.2V supply. The VCO yield is 94.7% for 70GHz operation.

A 70GHz Manufacturable Complementary LC-VCO with 6.14GHz Tuning Range in 65nm SOI CMOS

System and method are provided for continually monitoring reliability, or aging, of a digital system and for issuing a warning signal if digital system operation degrades past a specified threshold. The technique includes implementing a ring oscillator sensor in association with the digital system, wherein logic and/or device percent composition of the ring oscillator sensor mirrors percent composition thereof within the digital system. Counter logic is coupled to the ring oscillator sensor for converting outputted count signals to an oscillation frequency, and control logic is coupled to the counter logic for periodically evaluating oscillation frequency of the ring oscillator sensor and generating a warning signal indicative of reliability degradation if at least one of: (i) a measured or estimated oscillation frequency is below a warning threshold frequency; or (ii) a measured or estimated rate of change in a difference between measured oscillation frequencies exceeds an acceptable rate of change threshold.

System and method for monitoring reliability of a digital system

A circuit includes a plurality of transistors responsive to a plurality of latches that store a test code. The circuit further includes a first bit line coupled to a data cell and coupled to a sense amplifier. The circuit also includes a second bit line coupled to a reference cell and coupled to the sense amplifier. A current from a set of the plurality of transistors is applied to the data cell via the first bit line. The set of the plurality of transistors is determined based on the test code. The circuit also includes a test mode reference circuit coupled to the first bit line and to the second bit line.

Daeik Daniel Kim

Papers

Circuit structure and method of fabrication for facilitating radio frequency identification (RFID)

Three dimensional (3d) antenna structure

A 70GHz Manufacturable Complementary LC-VCO with 6.14GHz Tuning Range in 65nm SOI CMOS

System and method for monitoring reliability of a digital system

Sense amplifier offset voltage reduction