D
Daigo Kikuta
Researcher at Toyota
Publications - 25
Citations - 212
Daigo Kikuta is an academic researcher from Toyota. The author has contributed to research in topics: Layer (electronics) & High-electron-mobility transistor. The author has an hindex of 7, co-authored 22 publications receiving 193 citations. Previous affiliations of Daigo Kikuta include University of Tokushima.
Papers
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Copper gate AlGaN/GaN HEMT with low gate leakage current
TL;DR: In this article, a copper gate AlGaN/GaN high electron mobility transistors (HEMTs) with low gate leakage current was demonstrated, and the Schottky barrier height of Cu on n-GaN was 0.18 eV higher than that of Ni/Au.
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Reliability Evaluation of Al2O3Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN
TL;DR: The time-to-breakdown (tBD) of Al2O3 deposited by ozone-based atomic layer deposition (ALD) on dry-etched n-type GaN was evaluated by constantvoltage-stress time-dependent dielectric breakdown (TDDB) measurements.
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Band offset of Al1− x Si x O y mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
Kenji Ito,Daigo Kikuta,Tetsuo Narita,Keita Kataoka,Noritake Isomura,Kousuke Kitazumi,Mori Tomohiko +6 more
TL;DR: In this paper, the authors used hard X-ray photoelectron spectroscopy for the first time to determine the band diagrams between mixed oxide and GaN for various Si atom fraction x values.
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Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer
TL;DR: The reduction of gate leakage current in AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructure field effect transistors (HFETs) is influenced by the resistance of the insulating layers.
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Thermal stability investigation of copper‐gate AlGaN/GaN high electron mobility transistors
TL;DR: In this article, the thermal stability of copper (Cu)-gate AlGaN/GaN high electron mobility transistors (HEMTs) was investigated by annealing the devices at 300 °C and 500 °C for 1 h, and at 700°C for 30 min, respectively.