Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.

Microstrip filters for RF/microwave applications

Hexagonal ferrites: A review of the synthesis, properties and applications of hexaferrite ceramics

Microwave applications of soft ferrites

Since the first days of high-Tc superconductivity, the materials science and the physics of grain boundaries in superconducting compounds have developed into fascinating fields of research. Unique electronic properties, different from those of the grain boundaries in conventional metallic superconductors, have made grain boundaries formed by high-Tc cuprates important tools for basic science. They are moreover a key issue for electronic and large-scale applications of high-Tc superconductivity. The aim of this review is to give a summary of this broad and dynamic field. Starting with an introduction to grain boundaries and a discussion of the techniques established to prepare them individually and in a well-defined manner, the authors present their structure and transport properties. These provide the basis for a survey of the theoretical models developed to describe grain-boundary behavior. Following these discussions, the enormous impact of grain boundaries on fundamental studies is reviewed, as well as high-power and electronic device applications.

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Grain boundaries in high- T c superconductors

The development and current status of microwave ferrite technology is reviewed in this paper. An introduction to the physics and fundamentals of key ferrite devices is provided, followed by a historical account of the development of ferrimagnetic spinel and garnet (YIG) materials. Key ferrite components, i.e., circulators and isolators, phase shifters, tunable filters, and nonlinear devices are also discussed separately.

Ferrite devices and materials

A method for the calculation of the current distribution, resistance, and inductance matrices for a system of coupled superconducting transmission lines having finite rectangular cross-section is presented. These calculations allow accurate characterization of both high-T/sub c/ and low-T/sub c/ superconducting strip transmission lines. For a single stripline geometry with finite ground planes, the current distribution, resistance, inductance, and kinetic inductance are calculated as functions of the penetration depth for various film thicknesses. These calculations are then used to determine the penetration depth for Nb, NbN, and YBa/sub 2/Cu/sub 3/O/sub 7-x/ superconducting thin films from the measured temperature dependence of the resonant frequency of a stripline resonator. The calculations are also used to convert measured temperature dependence of the quality factor to the intrinsic surface resistance as a function of temperature for an Nb stripline resonator. >

Current distribution, resistance, and inductance for superconducting strip transmission lines

We review the salient features of two advanced nodes of an 8-Nb-layer fully planarized process developed recently at MIT Lincoln Laboratory for fabricating single flux quantum (SFQ) digital circuits with very large-scale integration on 200-mm wafers: the SFQ4ee and SFQ5ee nodes, where “ee” denotes that the process is tuned for energy-efficient SFQ circuits. The former has eight superconducting layers with 0.5- $\mu\text{m}$ minimum feature size and a 2- $\Omega/\text{sq}$ Mo layer for circuit resistors. The latter has nine superconducting layers: eight Nb wiring layers with the minimum feature size of 350 nm and a thin superconducting $\text{MoN}_{{x}}$ layer $(T_c \sim 7.5\ \text{K})$ with high kinetic inductance (about 8 pH/sq) for forming compact inductors. A nonsuperconducting $(T_{c} layer with lower nitrogen content is used for 6- $\Omega/\text{sq}$ planar resistors for shunting and biasing of Josephson junctions (JJs). Another resistive layer is added to form interlayer sandwich-type resistors of milliohm range for releasing unwanted flux quanta from superconducting loops of logic cells. Both process nodes use Au/Pt/Ti contact metallization for chip packaging. The technology utilizes one layer of Nb/AlOx-Al/Nb JJs with critical current density $J_{c}$ of 100 $\mu\text{A}/\mu\text{m}^{2}$ and minimum diameter of 700 nm. Circuit patterns are defined by 248-nm photolithography and high-density plasma etching. All circuit layers are fully planarized using chemical mechanical planarization of SiO2 interlayer dielectric. The following results and topics are presented and discussed: the effect of surface topography under the JJs on the their properties and repeatability, $I_c$ and $J_c$ targeting, effect of hydrogen dissolved in Nb, $\text{MoN}_{x}$ properties for the resistor layer and for high-kinetic-inductance layer, and technology of milliohm-range resistors.

Advanced Fabrication Processes for Superconducting Very Large-Scale Integrated Circuits

We review the salient features of two advanced nodes of an 8-Nb-layer fully planarized process developed recently at MIT Lincoln Laboratory for fabricating Single Flux Quantum(SFQ) digital circuits with very large scale integration on 200-mm wafers: the SFQ4ee and SFQ5ee nodes, where 'ee' denotes the process is tuned for energy efficient SFQ circuits. The former has eight superconducting layers with 0.5 {\mu}m minimum feature size and a 2 {\Omega}/sq Mo layer for circuit resistors. The latter has nine superconducting layers: eight Nb wiring layers with the minimum feature size of 350 nm and a thin superconducting MoNx layer (Tc ~ 7.5 K) with high kinetic inductance (about 8 pH/sq) for forming compact inductors. A nonsuperconducting (Tc < 2 K) MoNx layer with lower nitrogen content is used for 6 {\Omega}/sq planar resistors for shunting and biasing of Josephson junctions. Another resistive layer is added to form interlayer, sandwich-type resistors of m{\Omega} range for releasing unwanted flux quanta from superconducting loops of logic cells. Both process nodes use Au/Pt/Ti contact metallization for chip packaging. The technology utilizes one layer of Nb/AlOx-Al/Nb JJs with critical current density, Jc of 100 {\mu}A/{\mu}m^2 and minimum diameter of 700 nm. Circuit patterns are defined by 248-nm photolithography and high density plasma etching. All circuit layers are fully planarized using chemical mechanical planarization (CMP) of SiO2 interlayer dielectric. The following results and topics are presented and discussed: the effect of surface topography under the JJs on the their properties and repeatability, critical current and Jc targeting, effect of hydrogen dissolved in Nb, MoNx properties for the resistor layer and for high kinetic inductance layer, technology of m{\Omega}-range resistors.

Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits

We present measurements of the surface impedance as a function of frequency (1--17 GHz), temperature (4.2--91 K), and peak rf magnetic field (0${\mathit{H}}_{\mathrm{rf}}$500 Oe) for high-quality epitaxial ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathit{x}}$ thin films using a stripline-resonator technique. The lowest surface resistance at 1.5 GHz was 15 \ensuremath{\mu}\ensuremath{\Omega} at 77 K and 3 \ensuremath{\mu}\ensuremath{\Omega} at 4.3 K. The results for the low- and intermediate-field regions (${\mathit{H}}_{\mathrm{rf}}$50 Oe at 77 K) are explained by a coupled-grain model, which treats the film as a network of superconducting grains connected by grain boundaries acting as resistively shunted Josephson junctions. Quantitative agreement has been obtained between the model and the measurements. The effective junction critical current density, grain size, and shunt resistance are used in the model to characterize the films. The high-field region may be explained by flux penetration into the grains but is not modeled in detail here.

Nonlinear surface impedance for YBa2Cu3O7-x thin films: Measurements and a coupled-grain model.

A report is presented on measurements of the surface impedance, Z/sub S/, of YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films using a stripline resonator. The films were deposited on LaAlO/sub 3/ substrates by off-axis magnetron sputtering. The authors obtained Z/sub S/ as a function of frequency from 1.5 to 20 GHz, as a function of temperature from 4 K to the transition temperature ( approximately 90 K), and as a function of the RF magnetic field from zero to 300 Oe. At low temperatures the surface resistance, R/sub S/, of the films shows a very weak dependence on the magnetic field up to 225 to 250 Oe. At 77 K, R/sub S/ is proportional to the square of the field. The penetration depth shows a much weaker dependence on the field than does R/sub S/. The origins of the magnetic field dependence of Z/sub S/ are also discussed. >

Daniel E. Oates

Papers

Current distribution, resistance, and inductance for superconducting strip transmission lines

Advanced Fabrication Processes for Superconducting Very Large-Scale Integrated Circuits

Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits

Nonlinear surface impedance for YBa2Cu3O7-x thin films: Measurements and a coupled-grain model.

Stripline resonator measurements of Z/sub s/ versus H/sub rf/ in YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films