The various arguments for introducing optical interconnections to silicon CMOS chips are summarized, and the challenges for optical, optoelectronic, and integration technologies are discussed. Optics could solve many physical problems of interconnects, including precise clock distribution, system synchronization (allowing larger synchronous zones, both on-chip and between chips), bandwidth and density of long interconnections, and reduction of power dissipation. Optics may relieve a broad range of design problems, such as crosstalk, voltage isolation, wave reflection, impedence matching, and pin inductance. It may allow continued scaling of existing architectures and enable novel highly interconnected or high-bandwidth architectures. No physical breakthrough is required to implement dense optical interconnects to silicon chips, though substantial technological work remains. Cost is a significant barrier to practical introduction, though revolutionary approaches exist that might achieve economies of scale. An Appendix analyzes scaling of on-chop global electrical interconnects, including line inductance and the skin effect, both of which impose significant additional constraints on future interconnects.

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Rationale and challenges for optical interconnects to electronic chips

Cell lines having genetically modified glycosylation pathways that allow them to carry out a sequence of enzymatic reactions, which mimic the processing of glycoproteins in humans, have been developed. Recombinant proteins expressed in these engineered hosts yield glycoproteins more similar, if not substantially identical, to their human counterparts. The lower eukaryotes, which ordinarily produce high-mannose containing N-glycans, including unicellular and multicellular fungi are modified to produce N-glycans such as Man 5 GlcNAc 2 or other structures along human glycosylation pathways. This is achieved using a combination of engineering and/or selection of strains which: do not express certain enzymes which create the undesirable complex structures characteristic of the fungal glycoproteins, which express exogenous enzymes selected either to have optimal activity under the conditions present in the fungi where activity is desired, or which are targeted to an organelle where optimal activity is achieved, and combinations thereof wherein the genetically engineered eukaryote expresses multiple exogenous enzymes required to produce “human-like” glycoproteins.

Methods for producing modified glycoproteins

Technologies now exist for implementing dense surface-normal optical interconnections for silicon CMOS VLSI using hybrid integration techniques. The critical factors in determining the performance of the resulting photonic chip are the yield on the transceiver device arrays, the sensitivity and power dissipation of the receiver and transmitter circuits, and the total optical power budget available. The use of GaAs-AlGaAs multiple-quantum-well p-i-n diodes for on-chip detection and modulation is one effective means of implementing the optoelectronic transceivers. We discuss a potential roadmap for the scaling of this hybrid optoelectronic VLSI technology as CMOS linewidths shrink and the characteristics of the hybrid optoelectronic transceiver technology improve. An important general conclusion is that, unlike electrical interconnects, such dense optical interconnections directly to an electronic circuit will likely be able to scale in capacity to match the improved performance of future CMOS technology.

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Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmap

A solid-state imaging apparatus which performs a global exposure operation, in a determined imaging region, for performing exposure as matching respective start times and respective end times of all rows, comprises: plural unit pixels arranged in two-dimensional matrix and each comprising a photoelectric converting unit for generating a pixel signal by photoelectric conversion, a holding unit for holding the generated pixel signal, and a first gate for transferring the generated pixel signal to the holding unit; a first controlling line connected commonly to the first gates in the unit pixels on the same row; a vertical controlling circuit for resetting the unit pixel; and a first driving line connected to the first controlling line, and not connected to and thus independent of the vertical controlling circuit, thereby enabling to reduce a current flowing in a power supply of the vertical controlling circuit when driving electrodes of the holding units.

Solid-state imaging apparatus

Optoelectronic-VLSI (OE-VLSI) technology represents the intimate integration of photonic devices with silicon VLSI electronics. We review the motivations and status of emerging OE-VLSI technologies and examine the performance of OE-VLSI technology versus conventional wire-bonded OE packaging. The results suggest that OE-VLSI integration offers substantial power and speed improvements even when relatively small numbers of photonic devices are driven with commodity complementary metal-oxide-semiconductor logic technologies.

Optoelectronic-VLSI: photonics integrated with VLSI circuits

We investigate the performance of free-space optical interconnection systems at the technology level. Specifically, three optical transmitter technologies, lead-lanthanum-zirconate-titanate and multiple-quantum-well modulators and vertical-cavity surface-emitting lasers, are evaluated. System performance is measured in terms of the achievable areal data throughput and the energy required per transmitted bit. It is shown that lead-lanthanum-zirconate-titanate modulator and vertical-cavity surface-emitting laser technologies are well suited for applications in which a large fan-out per transmitter is required but the total number of transmitters is relatively small. Multiple-quantum-well modulators, however, are good candidates for applications in which many transmitters with a limited fan-out are needed.

Digital free-space optical interconnections: a comparison of transmitter technologies

Imaging sensors having dual-port for digital readout to pipeline readout processes of two different groups of pixels.

Semiconductor imaging sensor array devices with dual-port digital readout

The invention provides the art with novel image sensor pixel designs comprising stacked, pinned photodiodes. The stacked pinned photodiodes provide pixels with greatly increased dynamic range. The stacked pinned photodiodes also allow improved color discrimination for low light imaging, for example utilizing pixels with no overlaying color filter array.

Stacked Photodiodes for Extended Dynamic Range and Low Light Color Discrimination

Passive electrical circuits whose voltage and current equations are exactly equivalent to the small-signal rate equations of a semiconductor laser are derived to model an electrically modulated laser (verified to be the same as that given in the literature), an optically modulated laser (i.e., a laser used as an optical amplifier), and a multimode laser. These circuits offer a fast and efficient simulation tool with little computational complexity in which the small-signal assumption (i.e., small modulation range) is neither violated nor insufficient for the simulation.

Small-signal-equivalent circuits for a semiconductor laser.

Methods and systems for analog-to-digital conversion applicable to an image sensor, such as a CMOS image sensor, in which an ADC comprises built-in redundancy such that the ADC can start its conversion cycle before the ADC input settles to a desired resolution and the ADC can yet accurately convert the ADC input to a digital value with the desired resolution. In a CMOS image sensor, such an ADC configuration enables the pixel readout time to overlap with the ADC conversion time, reducing the total time needed to convert the pixel signal value to a digital value with the desired resolution.

Daniel Van Blerkom

Papers

Digital free-space optical interconnections: a comparison of transmitter technologies

Semiconductor imaging sensor array devices with dual-port digital readout

Stacked Photodiodes for Extended Dynamic Range and Low Light Color Discrimination

Small-signal-equivalent circuits for a semiconductor laser.

Analog-to-digital converter with redundancy for image sensor readout