Showing papers by "David A. Hodges published in 1968"

Modeling and simulation of insulated-gate field-effect transistor switching circuits

Abstract: A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.

Large-capacity semiconductor memory

Abstract: Integrated-circuit memories using bipolar transistor technology are compared with memories based on various forms of the insulated-gate field-effect transistor (IGFET). A combination of p-channel IGFET memory cells with bipolar transistor access circuits appears to offer a desirable combination of characteristics. Memory organization, chip design, packaging, and interconnection alternatives are considered. Beam-lead sealed-junction technology has significant advantages over other packaging and interconnection technologies in the realization of semiconductor memory. Some of the problems expected in the design of a million-bit computer memory are examined with attention to power dissipation, interconnections, reliability, maintainability, and cost. Finally, the potential characteristics of a million-bit semiconductor memory based on today's technology are compared with the characteristics of ferrite core, planar film, and cylindrical film magnetic memories. The conclusion drawn from this exploratory study is that semiconductor memory has attractive potential for both small- and large-capacity memory applications.

Schottky barrier diodes as impedance elements

Abstract: The reverse characteristic of Schottky barrier diodes provides easily fabricated, small area, high impedance elements for micropower circuits. Advantageously, the diodes are fabricated within semiconductive integrated circuit arrays by forming rhodium silicide on relatively high resistivity P-type silicon. Such diodes are particularly useful in the loads of flip-flops used as cells of a semiconductor memory.