Showing papers by "David Broido published in 1989"
TL;DR: In this article, a new set of Luttinger parameters were proposed to describe the highly anisotropic nature of the valence band in GaAs and showed that the heavy and light-hole masses along the [111] direction are $075 and $0082{m}_{0}, respectively.
Abstract: Electronic Raman scattering (ERS) measurements of photoexcited holes have been performed on $\mathrm{GaAs}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ multiple quantum wells grown in the [111] $b$ and [100] directions These measurements indicate that the heavy- and light-hole masses along the [111] direction are $075{m}_{0}$ and $0082{m}_{0}$, respectively These values, compared with the heavy- and light-hole masses in the [100] direction ($034{m}_{0}$ and $0094{m}_{0}$ respectively), reveal the highly anisotropic nature of the valence band in GaAs We propose a new set of Luttinger parameters that describes this anisotropy
39 citations
TL;DR: On developpe une theorie de la reponse electromagnetique des heterostructures d'un semiconducteur en se basant sur une approche de la fonctiond de Feibelman and en comparant les resultats aux donnees experimentales appropriees.
Abstract: On developpe une theorie de la reponse electromagnetique des heterostructures d'un semiconducteur en se basant sur une approche de la fonctiond de Feibelman. On teste cette theorie en etudiant la reponse d'une heterojonction du semiconducteur GaAs−Al x Ga 1−x As et en comparant les resultats aux donnees experimentales appropriees
20 citations
TL;DR: In this article, a new set of Luttinger parameters were proposed to describe the anisotropy of the valence band in GaAs and are consistent with the interband and intersubband transitions observed in [100] and [111]b MQW's.
10 citations
TL;DR: In this article, the valence subbands and the binding energies of ground heavy and light hole excitons are calculated for a GaAsAlGaAs quantum well whose growth axis is oriented along the [111]-crystallographic direction.
2 citations
01 Jan 1989
TL;DR: In this article, the 2D electron system in GaAs quantum wells was investigated using optical absorption and photoluminescence measurements in the bandgap region, for magnetic fields B≦30 T and temperatures T≧0.4 K.
Abstract: The 2D electron system in GaAs quantum wells was investigated using optical absorption and photoluminescence measurements in the bandgap region, for magnetic fields B≦30 T and temperatures T≧0.4 K. Several optical anomalies appear as spectral blue-shifts for both increasing field and decreasing temperature, and are related to electron-electron interactions. The anomalies observed at the 2D Landau filling factors ν⋍1 and ν<2/3 have very different field and temperature dependencies. The one near ν=1 is associated with changes in population of the lowest spin-split Landau level. The ones at higher fields are observed only for T<3 K, concurrent with the fractional quantum Hall effect.
1 citations