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Showing papers by "David Broido published in 2000"


Journal ArticleDOI
TL;DR: In this paper, a formalism for the power factor for thermoelectric transport in quantum well and wire superlattices using full electronic band structure and the complete inelastic Boltzmann equations for carrier-phonon scattering is given.
Abstract: A formalism is given for the power factor for thermoelectric transport in quantum well and wire superlattices using full electronic band structure and the complete inelastic Boltzmann equations for carrier-phonon scattering. Detailed calculations are given for realistic PbTe quantum well and quantum wire superlattices. In the quantum well case the dependence of the power factor on potential is much weaker than in previous work, and its behavior is traced to the underlying physics. Results are also given for the dependence of the power factors on growth direction.

23 citations



Journal ArticleDOI
TL;DR: In this article, the ground state and electromagnetic response of InAs-GaSb type-II quantum dots in the presence of a vertical magnetic field were investigated theoretically, and it was shown that the interlayer Coulomb interaction between the electrons and the holes combined with the k·p mixing breaks the generalized Kohn's theorem leading to a complex FIR spectrum.
Abstract: We have investigated theoretically the ground state and electromagnetic response of InAs–GaSb type-II quantum dots in the presence of a vertical magnetic field. The ground state is calculated within the Hartree approximation using a 2-band k·p effective mass Hamiltonian to represent the coupling between the two spin-split sets of dot levels derived from the lowest InAs electron subband and the highest GaSb heavy hole subband. The FIR response is calculated within the RPA. We show that the interlayer Coulomb interaction between the electrons and the holes combined with the k·p mixing breaks the generalized Kohn's theorem leading to a complex FIR spectrum.

3 citations


Book ChapterDOI
01 Jan 2000
TL;DR: In this article, the results of cyclotron resonance of free electrons and holes and internal transitions of their bound complexes have been studied in GaAs/AlGaAs quantum wells in high magnetic fields by Optically Detected Resonance spectroscopy.
Abstract: Cyclotron Resonance (CR) of free electrons and holes and internal transitions of their bound complexes have been studied in GaAs/AlGaAs quantum wells in high magnetic fields by Optically Detected Resonance (ODR) spectroscopy. Two nearly degenerate 1s→2p+ internal exciton transitions (IETs), as well as two well-separated 1s→2p- IETs resulting from the two distinct heavy-hole magneto-excitons were observed. Measurements of both electron and hole CR and these IETs in the same sample evidence the predicted consequences of the symmetry of the magneto-exciton Hamiltonian. Extensions of these studies to samples that showed neutral (heavy-hole hhX) as well as negatively charged (X-) exciton photoluminescence-lines have permitted the first observation of internal transitions of X-. Both singlet and triplet transitions of X- were observed, and new physics associated with translational invariance for this interesting three-particle complex was revealed. The observation of electron and hole CR and several IETs in a single sample exemplifies the promise of the ODR technique for the study of semiconductor nanostructures.