Multiphoton microscopy (MPM) has found a niche in the world of biological imaging as the best noninvasive means of fluorescence microscopy in tissue explants and living animals. Coupled with transgenic mouse models of disease and 'smart' genetically encoded fluorescent indicators, its use is now increasing exponentially. Properly applied, it is capable of measuring calcium transients 500 microm deep in a mouse brain, or quantifying blood flow by imaging shadows of blood cells as they race through capillaries. With the multitude of possibilities afforded by variations of nonlinear optics and localized photochemistry, it is possible to image collagen fibrils directly within tissue through nonlinear scattering, or release caged compounds in sub-femtoliter volumes.

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Nonlinear magic: multiphoton microscopy in the biosciences

Nonlinear Optical Crystals: A Complete Survey

The absorption and emission properties of transition metal (TM)-doped zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media. Crystals of ZnS, ZnSe, and ZnTe, individually doped with Cr/sup 2+/, Co/sup 2+/, Ni/sup 2+/, or Fe/sup 2+/ have been evaluated. The absorption and emission properties are presented and discussed in terms of the energy levels from which they arise. The absorption spectra of the crystals studied exhibit strong bands between 1.4 and 2.0 /spl mu/m which overlap with the output of strained-layer InGaAs diodes. The room-temperature emission spectra reveal wide-band emissions from 2-3 /spl mu/m for Cr and from 2.8-4.0 /spl mu/m for Co, Cr luminesces strongly at room temperature; Co exhibits significant losses from nonradiative decay at temperatures above 200 K, and Ni and Fe only luminesce at low temperatures, Cr/sup 2+/ is estimated to have the highest quantum yield at room temperature among the media investigated with values of /spl sim/75-100%. Laser demonstrations of Cr:ZnS and Cr:ZnSe have been performed in a laser-pumped laser cavity with a Co:MgF/sub 2/ pump laser. The output of both lasers were determined to peak at wavelengths near 2.35 /spl mu/m, and both lasers demonstrated a maximum slope efficiency of approximately 20%. Based on these initial results, the Cr/sup 2+/ ion is predicted to be a highly favorable laser ion for the mid-IR when doped into the zinc chalcogenides; Co/sup 2+/ may also serve usefully, but laser demonstrations yet remain to be performed.

Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media

Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

https://iopscience.iop.org/article/10.1088/0953-8984/21/36/364221/pdf

Chemical vapour deposition synthetic diamond: materials, technology and applications.

The imaging properties of optical microscopes are often compromised by aberrations that reduce image resolution and contrast. Adaptive optics technology has been employed in various systems to correct these aberrations and restore performance. This has required various departures from the traditional adaptive optics schemes that are used in astronomy. This review discusses the sources of aberrations, their effects and their correction with adaptive optics, particularly in confocal and two-photon microscopes. Different methods of wavefront sensing, indirect aberration measurement and aberration correction devices are discussed. Applications of adaptive optics in the related areas of optical data storage, optical tweezers and micro/nanofabrication are also reviewed.

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Adaptive optics in microscopy

A dedicated two-photon microscope incorporating adaptive-optic correction of specimen-induced aberrations is presented. Wavefront alteration of the scanning laser beam was achieved by use of a micromachined deformable mirror. Post scan head implementation produces a compact module compatible with the Bio-Rad MRC-600 scan head. Automatic aberration correction using feedback from the multiphoton fluorescence intensity allowed the adaptive optic to extend the imaging depth attainable in both artificial and biological refractive-index mismatched samples. With a 1.3-NA, x40, Nikon oil immersion objective, the imaging depth in water was extended from approximately 3.4 to 46.2 µm with a resolution defined by a FWHM axial point-spread function of 1.25 µm.

Practical implementation of adaptive optics in multiphoton microscopy

A review on the recent developments in the field of long-wavelength (A > 1.2 μm) high-brightness optically-pumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different III-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 μm and 5.3 μm are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.

High-brightness long-wavelength semiconductor disk lasers

We report the first high-power vertical external-cavity surface-emitting laser operating at 1.3 /spl mu/m. Continuous-wave output power greater than 0.6 W was achieved using a GaInNAs/GaAs structure capillary-bonded to a single-crystal diamond heatspreader.

A 0.6 W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32 /spl mu/m

We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.

0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

The use of crystalline heatspreaders to improve thermal management in optically pumped vertical-external-cavity surface-emitting lasers is studied via finite-element analysis. The required properties of a heatspreader are examined and the effect on heat flow is discussed, as are thermal lensing effects. The advantages of diamond heatspreaders are highlighted. The power-scaling potential is compared to other approaches. Heatspreaders are found to be promising, particularly for use with low thermal conductivity semiconductors.

David Burns

Papers

Practical implementation of adaptive optics in multiphoton microscopy

High-brightness long-wavelength semiconductor disk lasers

A 0.6 W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32 /spl mu/m

0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach