D
Debashis Panda
Researcher at National Institute of Standards and Technology
Publications - 70
Citations - 1708
Debashis Panda is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Engineering & Chemistry. The author has an hindex of 18, co-authored 43 publications receiving 1292 citations. Previous affiliations of Debashis Panda include Indian Institute of Technology Kharagpur & National Chiao Tung University.
Papers
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Journal ArticleDOI
Growth, dielectric properties, and memory device applications of ZrO2 thin films
Debashis Panda,Tseung-Yuen Tseng +1 more
TL;DR: In this article, the impact of different top and bottom electrodes, and different doping elements, on ZrO 2 dielectric properties are described, and a roadmap of the applications of ZRO 2 thin film in future low power, nanoscale microelectronic device applications is realized from this review.
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Status and Prospects of ZnO-Based Resistive Switching Memory Devices
TL;DR: This review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO and covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices.
Journal ArticleDOI
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
Debashis Panda,Tseung-Yuen Tseng +1 more
TL;DR: A review of the progress of different synthesis methods and applications of 1D-ZnO nanostructures can be found in this paper, where the authors provide an overview of the recent activities of the growth and applications for sensor, LED, photodetector, laser, and RS memory devices.
Journal ArticleDOI
Forming-free bipolar resistive switching in nonstoichiometric ceria films
Muhammad Ismail,Muhammad Ismail,Chun Yang Huang,Debashis Panda,Chung-Jung Hung,T. M. Tsai,Jheng-Hong Jieng,Chun-An Lin,Umesh Chand,Anwar Manzoor Rana,Ejaz Ahmed,Ijaz Talib,M.Y. Nadeem,Tseung-Yuen Tseng +13 more
TL;DR: The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).
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A Collective Study on Modeling and Simulation of Resistive Random Access Memory
TL;DR: This review provides detailed information regarding the various physical methodologies considered for developing models for RRAM devices and elucidates their features and limitations.