D
Debbie G. Senesky
Researcher at Stanford University
Publications - 148
Citations - 2525
Debbie G. Senesky is an academic researcher from Stanford University. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 23, co-authored 136 publications receiving 1911 citations. Previous affiliations of Debbie G. Senesky include Jean Monnet University & University of California.
Papers
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Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review
TL;DR: This paper reviews the recent advancements in silicon carbide (SiC) process technologies and demonstrations of SiC sensors and electronic circuits in hostile environments, which supports the use ofSiC technology for health and performance monitoring of aerospace systems.
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AlN/3C-SiC composite plate enabling high-frequency and high-Q micromechanical resonators.
TL;DR: An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1).
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Advances in silicon carbide science and technology at the micro- and nanoscales
TL;DR: In this article, the authors focus on the materials science and processing technologies for silicon carbide thin films and low dimensional structures, and details recent progress in manufacturing technology, including deposition, metallization, and fabrication of semiconductor microdevices, with emphasis on sensor technology.
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Solar-Blind Photodetectors for Harsh Electronics
Dung-Sheng Tsai,Wei-Cheng Lien,Der Hsien Lien,Kuan-Ming Chen,Meng-Lin Tsai,Debbie G. Senesky,Yueh-Chung Yu,Albert P. Pisano,Jr-Hau He,Jr-Hau He +9 more
TL;DR: AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments and are demonstrated by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness.
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Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C
TL;DR: In this paper, a temperature sensor based on 4H-SiC pn diode is demonstrated, which is capable of stable operation in a temperature range from 20°C to 600°C.