Deenesh Padhi

TL;DR: In this article, a method for processing a substrate including positioning the substrate in a processing chamber and introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

TL;DR: In this paper, a method for forming a metal or metal silicide layer by an electroless deposition technique is described, and a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface and depositing a conductive material on the initiation layer.

TL;DR: In this article, a deposition process for amorphous carbon on a substrate is described, which includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber and introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the process chamber.

TL;DR: In this paper, a method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, and introducing a heavy noble gas into the process chamber, which is selected from the group consisting of argon, krypton, xenon and combinations thereof.

TL;DR: In this paper, a method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is described, and the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution.