Dimitar V. Dimitrov

TL;DR: In this paper, the existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque induced magnetization switching and magnetic-domain-wall motion.

TL;DR: In this paper, a temperature-dependent complex ac susceptibility method was proposed to extract the Curie temperature distribution for heat-assisted magnetic recording (HAMR) media, which is used in combination with other high field magnetic metrology and spin-stand recording to provide feedback for continuous improvements of HAMR media.

TL;DR: In this article, asymptotic forms of the switching time distribution from the stochastic Landau-Lifshitz-Gilbert equation, and numerical solutions of the first and second moments of switching time from the corresponding Fokker-Planck equation, are used to characterize switching time and switching current density for the whole time range, from the second thermal reversal region to the nanosecond dynamic reversal region.

TL;DR: In this paper, the magnetic spin-torque memory cells, also referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or "out-of-plane", are described.

TL;DR: In this article, a tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield, and a non-magnetic spacer layer separating the reference magnetic element from the free magnetic element.