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Dominik Bischoff

Researcher at Solid State Physics Laboratory

Publications -  26
Citations -  874

Dominik Bischoff is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 17, co-authored 26 publications receiving 793 citations. Previous affiliations of Dominik Bischoff include ETH Zurich.

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Localized charge carriers in graphene nanodevices

TL;DR: In this article, a review of the mechanisms responsible for localized charge localization in nanoribbons is presented, and the consequences for physics and applications are discussed, such as multiple coupled sites of localized charge, cotunneling processes, and excited states.
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Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling.

TL;DR: The experimental observation of Fabry-Pérot interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene device is reported and the gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling).
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Anomalous sequence of quantum Hall liquids revealing a tunable Lifshitz transition in bilayer graphene.

TL;DR: The observed evolution of the degeneracies reveals the presence of a Lifshitz transition in bilayer graphene, and several phase transitions between correlated quantum Hall states at intermediate magnetic fields are identified in agreement with the calculated Evolution of the Landau level spectrum.
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Raman spectroscopy on etched graphene nanoribbons

TL;DR: In this paper, the authors investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy and show that the D-line intensity only depends on the edge region of the nanoriber, and that consequently the fabrication process does not introduce bulk defects.
Journal ArticleDOI

Raman spectroscopy on etched graphene nanoribbons

TL;DR: In this article, the authors investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy and show that the D-line intensity only depends on the edge region of the nanoriber, and that consequently the fabrication process does not introduce bulk defects.