Showing papers by "Dominique Drouin published in 2000"
Patent•
27 Oct 2000TL;DR: In this article, a focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound, which is then formed by etching the three layers to leave on the substrate, the metal/sicon compound structure with the extreme ultra-violet absorbent layer beneath it.
Abstract: To fabricate masks for deep ultra-violet lithography and for extreme ultra-violet lithography, a layer of material opaque to deep ultra-violet radiation and an extreme ultra-violet radiation absorbent layer are each deposited successively with a layer of silicon and a layer of metal on a respective transparent substrate. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. The deep ultra-violet mask is then formed by etching the three layers to leave on the substrate, the metal/silicon compound structure with the extreme ultra-violet absorbent layer beneath it. The extreme ultra-violet mask is fabricated by forming the absorbent layer successively of an etch-stop sublayer, a repair buffer sublayer, and a sublayer of extreme ultra-violet radiation absorbent material, which, after etching, leaves on the substrate, the metal/silicon compound structure with the extreme ultra-violet radiation absorbent sub-layer and the repair buffer sublayer beneath it.
10 citations
TL;DR: In this paper, the authors used a Monte Carlo simulation of electron trajectories and correlated with experiments using Ni as the thin metallic film to show that the SiDWEL process is possible when the electrons lose all their energy in a layer thickness comparable to the phonon mean free path.
Abstract: To overcome the limitation of resists in electron beam lithography, a resistless electron beam lithography technique was recently developed. In the silicide direct-write electron-beam lithography process (SiDWEL), a thin metallic film is deposited on a silicon surface. A low-energy (<3 keV) electron beam is then used to enable the intermixing of the metal and the silicon layers through thermal effects. A chemical etch is then used to remove the unexposed metal regions. Thermal calculations are performed using a Monte Carlo simulation of electron trajectories and are correlated with experiments using Ni as the thin metallic film. A comparison of the doses required for the formation of several metals is also done. Results show that the SiDWEL process is possible when the electrons lose all their energy in a layer thickness comparable to the phonon mean free path. Finally, experiments are performed using multilayer samples to form silicide structures.
4 citations
TL;DR: In this paper, the silicide structures formed by SiDWEL are used as etch masks for the fabrication of DUV and EUV lithography mask elements, achieving resolutions better than 250 nm for chromium DUV masks and 200 nm for tantalum EUV masks.
Abstract: Silicide direct-write electron beam lithography (SiDWEL) is a high resolution lithography process which does not require spin-coating. The silicide structures formed by SiDWEL are used as etch masks for the fabrication of DUV and EUV lithography mask elements. Resolutions better than 250 nm for chromium DUV masks and 200 nm for tantalum EUV masks are obtained.
3 citations
TL;DR: In this article, the results support the earlier observations of induced signal components being present, with even negative or inverted images being obtained under some detector configurations due to the noise cancellation techniques used.
Abstract: The simple models for low energy secondary electron (SE) detection in the variable pressure or environmental scanning electron microscope (ESEM) describe a gas-amplified cascade from sample to detector when a conventional biased detector is used. Recent images obtained using a modified specimen current imaging approach however have suggested that at least a portion of the image is an induced field effect, in agreement with some of the early work. Our recent aim has been to investigate a range of detector designs and positions within the chamber in both the old ElectroScan E-3 model ESEM and the current generation FEI XL30 ESEM TMP. The results support the earlier observations of induced signal components being present, with even ‘negative’ or inverted images being obtained under some detector configurations due to the noise cancellation techniques used (figure 1). These results are being quantified using the DQE measurement approach to allow an objective comparison of different designs and positions. This data will be presented for the commercially available detectors and for the ‘Griffin’ grid detector under a range of operating conditions.