Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

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The missing memristor found

The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

▪ Abstract Solution phase syntheses and size-selective separation methods to prepare semiconductor and metal nanocrystals, tunable in size from ∼1 to 20 nm and monodisperse to ≤5%, are presented. Preparation of monodisperse samples enables systematic characterization of the structural, electronic, and optical properties of materials as they evolve from molecular to bulk in the nanometer size range. Sample uniformity makes it possible to manipulate nanocrystals into close-packed, glassy, and ordered nanocrystal assemblies (superlattices, colloidal crystals, supercrystals). Rigorous structural characterization is critical to understanding the electronic and optical properties of both nanocrystals and their assemblies. At inter-particle separations 5–100 A, dipole-dipole interactions lead to energy transfer between neighboring nanocrystals, and electronic tunneling between proximal nanocrystals gives rise to dark and photoconductivity. At separations <5 A, exchange interactions cause otherwise insulating ass...

Synthesis and Characterization of Monodisperse Nanocrystals and Close-Packed Nanocrystal Assemblies

Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Two-dimensional superlattices of organically passivated 2.6-nm silver quantum dots were prepared as Langmuir monolayers and transferred to highly oriented pyrolytic graphite substrates. The structural and electronic properties of the films were probed with variable temperature scanning tunneling microscopy. Particles passivated with decanethiol (interparticle separation distance of ∼1.1±0.2 nm) exhibited Coulomb blockade and staircase. For particles passivated with hexanethiol or pentanethiol (interparticle separation distance of ∼0.5±0.2 nm), the single-electron charging was quenched, and the redistribution of the density of states revealed that strong quantum mechanical exchange, i.e., wave-function hybridization, existed among the particles in these films.

/pdf/rehybridization-of-electronic-structure-in-compressed-two-4b48wi63mv.pdf

Rehybridization of electronic structure in compressed two-dimensional quantum dot superlattices

Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer beneath a major surface thereof; (b) growing self-assembled nanowires on the surface of the etchable layer; and (c) etching the etchable layer anisotropically down to the insulating layer, using the self-assembled nanowires as a mask. The self-assembled nanowires may be removed or left. In either event, nanowires of the second composition are formed. The method enables the formation of one-dimensional crystalline nanowires with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality. Further, the method of the present invention avoids traditional lithography methods, minimizes environmental toxic chemicals usage, simplifies the manufacturing processes, and allows the formation of high-quality one-dimensional nanowires over large areas.

Formation of nanoscale wires

We report experimental electrical characterization of Al/AlOx/molecule/Ti/Al planar crossbar devices incorporating Langmuir–Blodgett organic monolayers of eicosanoic acid, ‘fast blue’, or chlorophyll-B. Current–voltage and capacitance–voltage measurements on all three molecular device structures exhibited controllable switching hysteresis. Control devices containing no molecules showed no evidence of switching. A model of interface trapped charge mediating electronic transport appears consistent with all of the data. This data illustrates the importance of considering the complete device system (consisting of the molecules, the electrodes, and the interfaces) when analyzing its electrical behavior.

Electrical characterization of Al/AlOx/molecule/Ti/Al devices

Ordered arrays of rare-earth silicide nanowires on Si(0 0 1)

Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other. The nanowires are grown by first selecting the appropriate combination of materials that fulfill the foregoing criteria. The surface of the substrate on which the nanowires are to be formed must be cleaned in order (1) to ensure that the surface has an atomically flat, regular atomic structure on terraces and regular steps and (2) to remove impurities. Finally, epitaxial deposition of the first crystalline material on the cleaned surface is performed, thereby forming the self-assembled nanowires. Thus, one-dimensional epitaxial crystals are obtained with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality.

Douglas A. A. Ohlberg

Papers

Rehybridization of electronic structure in compressed two-dimensional quantum dot superlattices

Formation of nanoscale wires

Electrical characterization of Al/AlOx/molecule/Ti/Al devices

Ordered arrays of rare-earth silicide nanowires on Si(0 0 1)

Method to grow self-assembled epitaxial nanowires