Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).

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Diamond-like amorphous carbon

Multiferroic materials, which show simultaneous ferroelectric and magnetic ordering, exhibit unusual physical properties — and in turn promise new device applications — as a result of the coupling between their dual order parameters. We review recent progress in the growth, characterization and understanding of thin-film multiferroics. The availability of high-quality thin-film multiferroics makes it easier to tailor their properties through epitaxial strain, atomic-level engineering of chemistry and interfacial coupling, and is a prerequisite for their incorporation into practical devices. We discuss novel device paradigms based on magnetoelectric coupling, and outline the key scientific challenges in the field.

Multiferroics: progress and prospects in thin films.

Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces. Different symmetry constraints can be used to design structures exhibiting phenomena not found in the bulk constituents. A characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale. Examples such as interface superconductivity, magneto-electric coupling, and the quantum Hall effect in oxide heterostructures are representative of the scientific and technological opportunities in this rapidly emerging field.

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Emergent phenomena at oxide interfaces

BiVO4 photocatalysts for O2 evolution, which work under visible light irradiation, were prepared by an aqueous process. The BiVO4 photocatalysts were obtained by the reaction of layered potassium vanadate powder (KV3O8 and K3V5O14) with Bi(NO3)3 for 3 days in aqueous media at room temperature. Highly crystalline monoclinic and tetragonal BiVO4 were selectively synthesized by changing the ratio of vanadium to bismuth in the starting materials. X-ray diffraction and scanning electron microscopy measurements showed that the monoclinic BiVO4 was formed via a tetragonal BiVO4 intermediate. Tetragonal BiVO4 with a 2.9 eV band gap mainly possessed an ultraviolet absorption band while monoclinic BiVO4 with a 2.4 eV band gap had a characteristic visible light absorption band in addition to the UV band. The UV bands observed in the tetragonal and monoclinic BiVO4 were assigned to the band transition from O2p to V3d whereas the visible light absorption was due to the transition from a valence band formed by Bi6s or ...

A Novel Aqueous Process for Preparation of Crystal Form-Controlled and Highly Crystalline BiVO4 Powder from Layered Vanadates at Room Temperature and Its Photocatalytic and Photophysical Properties

An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

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Ferroelectric thin films: Review of materials, properties, and applications

Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure (720), the substantially vertically aligned carbon nanostructure (720) coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure (720) with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure (720) by forming an aperture in the gate and removing a portion of the dielectric.

Douglas H. Lowndes

Papers

Nanostructure field emission cathode