Douglas H. Lowndes

TL;DR: Gated field emission devices and systems and methods for their fabrication are described in this article, where a method for growing a substantially vertically aligned carbon nanostructure coupled to a substrate is described.

TL;DR: In this paper, the effect of pulsed XeCl (308 nm) laser treatment on the adhesion between sputter-deposited copper films and sapphire substrates is presented.

TL;DR: Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing as discussed by the authors, and good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities.

TL;DR: In this paper, the authors investigated several ways in which laser and ion-beam processing can be used to create vertically and/or laterally patterned nanostructured composite materials, and they considered the use of lasers in conjunction with laser or particle-beam-created surface defects to serve as distributed nucleation sites for quantum dot growth.

TL;DR: In this paper, the properties of p+ and n+ layers formed by pulsed ruby laser annealing (PRLA) of shallow implantations of Mg, Zn, Si and Se ions in both n-and p-type semiconducting GaAs have been evaluated using a combination of SIMS and electrical properties measurements.