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Duan Chenlong
Researcher at Huazhong University of Science and Technology
Publications - 19
Citations - 189
Duan Chenlong is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Atomic layer deposition & Coating. The author has an hindex of 8, co-authored 19 publications receiving 143 citations.
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Fluidized bed coupled rotary reactor for nanoparticles coating via atomic layer deposition.
TL;DR: The particle cartridge presented here enables both the fluidization and rotation acting on the particle bed, demonstrated by the analysis of pressure drop, which suggested a saturated growth of nanoscale Al2O3 films on spherical SiO2 NPs.
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Surface passivation of aluminum hydride particles via atomic layer deposition
TL;DR: In this paper, conformal amorphous Al2O3 films were coated around the crystalline α-AlH3 particles, serving as physical barriers to prevent reactions, and the retained hydrogen capacity of passivated particles was four times higher than the untreated sample.
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Surface passivation of Fe3O4 nanoparticles with Al2O3 via atomic layer deposition in a rotating fluidized bed reactor
TL;DR: In this paper, a home-built rotating fluidized bed (RFB) atomic layer deposition (ALD) reactor was employed to form dense and uniform nanoscale Al2O3 passivation layers on Fe3O4 nanoparticles.
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Ultrathin Zirconia Passivation and Stabilization of Aluminum Nanoparticles for Energetic Nanomaterials via Atomic Layer Deposition
Rong Chen,Kai Qu,Jiawei Li,Zhu Penghui,Duan Chenlong,Zhang Jing,Xiwen Li,Xiao Liu,Zhijian Yang +8 more
TL;DR: The stability of aluminum nanoparticles is a key issue that determines the energy performance of solid fuels, Al-based green propellants, and fuel cells as mentioned in this paper, and the surface native oxide shell (Al2O3).
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Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition
TL;DR: In this article, an experimental and numerical combined model of atmospheric atomic layer deposition (SALD) system is presented to establish the connection between the process parameters and the growth efficiency, a quantitative model on reactant isolation, throughput, and precursor utilization is performed.