Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.

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Perovskite Materials for Light-Emitting Diodes and Lasers.

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Electrodynamics Of Continuous Media

We present a polarization-sensitive optical coherence-domain reflectometer capable of characterizing the phase retardation between orthogonal linear polarization modes at each reflection point in a birefringent sample. The device is insensitive to the rotation of the sample in the plane perpendicular to ranging. Phase measurement accuracy is ±0.86°, but the reflectometer can distinguish local variations in birefringence as small as 0.05° with a distance resolution of 10.8 μm and a dynamic range of 90 dB. Birefringence-sensitive ranging in a wave plate, an electro-optic modulator, and a calf coronary artery is demonstrated.

Polarization-sensitive low-coherence reflectometer for birefringence characterization and ranging

Optical coherence tomography (OCT) and optical coherence microscopy (OCM) are novel techniques for noninvasive biomedical imaging based on low-coherence interferometry. OCT achieves high-spatial resolution ( 100 dB) in a fiber-optically integrated system which is suitable for application in minimally invasive diagnostics, including endoscopy. The technique of OCM combines the depth-ranging capability of OCT with the micron-scale resolution imaging capability of confocal microscopy to extend the available imaging depth of confocal microscopy up to several hundred micrometers deep in highly scattering tissues. The theoretical and technical bases for OCT and OCM imaging are described. Example OCT images are provided in gastrointestinal (GI) tissues to illustrate contrast between histological layers of the GI mucosa and differentiation of the mucosa from submucosa. Example OCM images revealing cellular-level microstructure up to several hundred micrometers deep in GI tissue are presented for the first time. The potential applications of OCT and OCM imaging in clinical diagnostic medicine are discussed.

Optical coherence tomography and microscopy in gastrointestinal tissues

Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices We also discuss the challenges—at both the device and the system level—that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms This Review Article examines the potential of spintronics in four key areas of application —memories, sensors, microwave devices, and logic devices — and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms

Opportunities and challenges for spintronics in the microelectronics industry

We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1  kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to reducing the laser linewidth while maintaining high output power and single-mode operation. The combination of narrow linewidth and high power enable its use in coherent communications, RF photonics, and optical sensing.

High-power sub-kHz linewidth lasers fully integrated on silicon

Heterogeneous silicon photonics using wafer bonding is reaching maturity with commercial products for the data center market being shipped in volume Here we give an overview of recent research in the area showing record device performance by using the best of both worlds: III–V for light generation and Si for guiding the light Utilizing the flexibility of the heterogeneous silicon platform, narrow-linewidth widely tunable lasers as well as fully integrated mode locked lasers with record pulse powers and pulse duration were demonstrated The ability to perform multiple die bonding with optimized epitaxially grown layer stacks was used to realize high-performance photonic integrated circuits both for communications and sensing In addition to III–V materials, nonreciprocal materials such as, for example, Ce:YIG can be bonded, providing additional functionality such as on-chip isolators and reconfigurable on-chip circulators On-chip isolation will become necessary with the increase in complexity of photonic integrated chips as photonic components such as lasers are sensitive to feedback effects

Photonic Integrated Circuits Using Heterogeneous Integration on Silicon

Narrow linewidth lasers have many applications, such as higher order coherent communications, optical sensing, and metrology. While semiconductor lasers are typically unsuitable for such applications due to relatively low coherence, recent advances in heterogeneous integration of III-V with silicon have shown that this is no longer true. In this tutorial, we discuss in-depth techniques that are used to drastically reduce the linewidth of a laser. The heterogeneous silicon-III/V platform can fully utilize these techniques, and fully integrated lasers with Lorentzian linewidth on the order of 100 Hz and tuning range of 120 nm are shown.

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Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration

As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III–V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.

1.3 μm submilliamp threshold quantum dot micro-lasers on Si

Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PICs). An ideal integrated optical isolator for a PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all of these requirements. In this paper we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record-high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully TE broadband isolators by depositing high-quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high-performance optical isolators on-chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.

Duanni Huang

Papers

High-power sub-kHz linewidth lasers fully integrated on silicon

Photonic Integrated Circuits Using Heterogeneous Integration on Silicon

Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration

1.3 μm submilliamp threshold quantum dot micro-lasers on Si

Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics