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E. A. Irving

Researcher at McMaster University

Publications -  10
Citations -  150

E. A. Irving is an academic researcher from McMaster University. The author has contributed to research in topics: Thin film & Silicon oxide. The author has an hindex of 6, co-authored 10 publications receiving 137 citations.

Papers
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Journal ArticleDOI

X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides

TL;DR: In this paper, the authors present a comic strip based on the work of David Mario, a writer at the Universidad Nacional de Tucuman. Facultad de Ciencias Exactas y Tecnologia.
Journal ArticleDOI

Laser photoluminescence spectrometer based on charge-coupled device detection for silicon-based photonics

TL;DR: In this paper, a multichannel modular room temperature photoluminescence spectroscopy system is described and characterized for evaluating semiconductor wafers, including those intended for light emitting structures from silicon-based photonic crystals.
Patent

Doped semiconductor nanocrystal layers and preparation thereof

TL;DR: In this paper, a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nano-crystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percentage of one or more rare earth elements, the one being (i) dispersed on the surface of the semiconductor nanoparticles and (ii) distributed substantially equally through the thickness of the group-IV oxide layer.
Journal ArticleDOI

H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown SiyO1−y:H(y>1∕3) thin films annealed in (Ar+5%H2)

TL;DR: In this article, the authors present a comic strip based on the work of David Mario, a writer at the Universidad Nacional de Tucuman. Facultad de Ciencias Exactas y Tecnologia.
Proceedings ArticleDOI

Silicon nanocrystal formation in silicon-rich silicon oxide thin films

Abstract: Silicon rich silicon oxide thin films have been fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition. Following their deposition, these films were subjected to thermal anneals at temperatures up to 1100°C for times of up to 120 minutes. Annealing of the films causes a phase separation of the material to form Si precipitates, which nucleate to form Si nanocrystals, within an amorphous SiO 2 matrix. The nucleation of the nanocrystals was analyzed as a function of the composition of the films, as determined by Rutherford backscattering and elastic recoil detection analysis experiments, and the annealing conditions. The bonding structure of the films was analyzed using Fourier transform infrared spectroscopy. Surface morphology, including analysis of the size and distribution of the nanocrystals, was determined through the use of atomic force microscopy. Spectroscopic ellipsometry, in the range from 600 to 1100 nm, was used to examine the effects of the formation of nanocrystals on the optical properties, i.e., index of refraction and extinction coefficient, of the films. Photoluminescence spectra were used to show that due to quantum confinement effects the nanocrystals exhibit luminescence, making them a potential candidate for integrated photonic emitters.