Journal ArticleDOI
Laser photoluminescence spectrometer based on charge-coupled device detection for silicon-based photonics
TLDR
In this paper, a multichannel modular room temperature photoluminescence spectroscopy system is described and characterized for evaluating semiconductor wafers, including those intended for light emitting structures from silicon-based photonic crystals.Abstract:
We describe and characterize a multichannel modular room temperature photoluminescence spectroscopy system. This low cost instrument offers minimization of size and complexity as well as good flexibility and acceptable spectral resolution. The system employs an efficient flexible front end optics and a sensitive spectrometer with a charge-coupled device array detector. The spectrometer has no moving parts and is more robust than a scanning system. The scientific motivation was to enable the photoluminescence study of various silicon photonics structures. Typical applications are presented for SiOx (x<2) films. It is demonstrated that high-quality steady state photoluminescence data with excellent signal to noise enhancement capability can be delivered besides the ability to perform simultaneous multiwavelength measurements in one shot. This instrument is shown to be useful for evaluating semiconductor wafers, including those intended for light emitting structures from silicon-based photonic crystals. The ...read more
Citations
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Journal ArticleDOI
The formation of light emitting cerium silicates in cerium-doped silicon oxides
TL;DR: In this article, the formation of cerium silicate [Ce2Si2O7 or Ce4.667 (SiO4)3O], the presence of which was confirmed by high resolution transmission electron microscopy.
Journal ArticleDOI
Light Emission from Rare-Earth Doped Silicon Nanostructures
TL;DR: In this article, the photoluminescence properties of rare earth (Tb or Ce)-doped silicon oxides were found to be highly dependent on the deposition parameters and annealing conditions.
Journal ArticleDOI
Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters
Patrick R. Wilson,Tyler Roschuk,Kayne Dunn,Elise Normand,Evgueni Chelomentsev,O. H. Y. Zalloum,Jacek Wojcik,Peter Mascher +7 more
TL;DR: X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.
Journal ArticleDOI
The influence of carbon on the structure and photoluminescence of amorphous silicon carbonitride thin films
TL;DR: In this article, thin films of silicon carbonitride (SiCN) were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using silane, nitrogen, and methane as the gas precursors.
Book ChapterDOI
Characterization of Thin Films and Coatings
TL;DR: In this article, the authors provide an overview of several capabilities based on photon, electron, and ion methods that can be effectively used to understand the structural, chemical, and electronic characteristics of a wide range of materials including thin films and coatings.
References
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Journal ArticleDOI
Correlation between luminescence and structural properties of Si nanocrystals
TL;DR: In this paper, strong room-temperature photoluminescence (PL) in the wavelength range 650-950 nm has been observed in high temperature annealed (1000-1300 °C) substoichiometric silicon oxide (SiOx) thin films prepared by plasma enhanced chemical vapor deposition.
Journal ArticleDOI
Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement
TL;DR: In this article, the photoluminescence of the silicon nanocrystals and their yield were measured as a function of their size, and it was found that the photophotonicity follows very closely the quantum-confinement model.
Journal ArticleDOI
Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2
B. Garrido Fernandez,María M. López,C. García,Alejandro Pérez-Rodríguez,Joan Ramon Morante,Caroline Bonafos,M. Carrada,Alain Claverie +7 more
TL;DR: In this article, a method for imaging Si nanocrystals in SiO2 matrices was proposed by using high-resolution electron microscopy in conjunction with conventional electron microscope in dark field conditions.