For the first time silicon double-drift IMPATT structures have been grown completely by Si molecular-beam epitaxy. The n-type layers are grown at 750 °C on low-resistivity n+-type substrates followed by p-type layers at 650 °C. The highly doped p+-layers are grown by solid-phase epitaxy in the MBE system. Device design is made for CW operation in W-band. The material is investigated by inspection of beveled samples, defect etching, TEM, SIMS, and spreading resistance measurements. Double-drift flat-profile diodes are housed and mounted employing a technological procedure approved for single-drift diodes. For initial device characterization, dc measurements are performed. Information about doping profile, series, and thermal resistances is obtained. Preliminary RF measurements delivered a maximum output power of 600 mW at 94 GHz with 6.7-percent efficiency from an unoptimized structure.

A 90-GHz double-drift IMPATT diode made with Si MBE

The harmonic balance method is a technique for the numerical solution of nonlinear analog circuits operating in a periodic, or quasi-periodic, steady-state regime. The method can be used to efficiently derive the continuous-wave response of numerous nonlinear microwave components including amplifiers, mixers, and oscillators. Its efficiency derives from imposing a predetermined steady-state form for the circuit response onto the nonlinear equations representing the network, and solving for the set of unknown coefficients in the response equation. Its attractiveness for nonlinear microwave applications results from its speed and ability to simply represent the dispersive, distributed elements that are common at high frequencies.

The last decade has seen the development and application of harmonic balance techniques to model analog circuits, particularly microwave circuits. The first part of this article reviewed the fundamental achievements made during this time. In this part, the extension of the method to quasi-periodic regimes, optimization analysis, oscillator analysis, studies of various convergence strategies, and practical applications are discussed. A critical assessment of the various types of harmonic balance techniques is given. Examples of designs which have been modeled using the harmonic balance technique and built both in hybrid and MMIC form are presented.

Nonlinear circuit analysis using the method of harmonic balance—a review of the art. II. Advanced concepts

A new P–N junction device model is presented. It consists of two numerical unidimensional macroscopic models. The first is a drift–diffusion model. The second is an energy model accounting for the carrier energy relaxation effects. Because device optimization requires systematic investigations, the computing time is of paramount importance and, so an accurate comparison between these two models was undertaken under both static steady-state and dynamic 94 GHz conditions in order to point out the relative interest of the energy model. This study is mainly devoted to silicon millimetre-wave IMPATTs. This comparison has highlighted the superiority of the energy model for the description of low field transport phenomena. But as IMPATT RF properties are mainly governed by high field transport, the RF power levels predicted by the two models have been found to be similar. Moreover it has shown that the energy model tends to underestimate both the efficiency and the diode terminal negative resistance level. This parasitic effect is inherent to the description of the carrier generation process by impact ionization which in this model is assumed to be governed by the carrier energy.

Drift–diffusion versus energy model for millimetre-wave impatt diodes modelling

The authors present a newly developed free-running steady-state oscillator analysis algorithm suited to large-signal oscillator analysis. Kurokawa's oscillation condition is coupled with the modified nodal admittance form of the circuit equations to avoid degenerate solutions. The algorithm was implemented by using both harmonic balance and frequency-domain spectral balance techniques. It was used in the simulation of monolithically integrated varactor-tuned MESFET oscillator. Good agreement between simulated power and oscillation frequency results was obtained. >

Computer-aided analysis of free-running microwave oscillators

The first experimental results on Si/SiGe heterostructure mitatt diodes are reported. The layers are grown by MBE. At 103 GHz a very low noise CW output of 25 mW is obtained. With an optimisation of the design higher output powers with still low noise operation are expected.

Si/SiGe heterostructure MITATT diode

A simplified microscopic model for investigating energy relaxation effects in millimeter-wave IMPATT devices is presented. A statistical process is used to describe electron-hole multiplication by impact ionization from knowledge of the ionization coefficients. These coefficients are assumed to be functions of the individual energy of carriers (holes and electrons). A relaxation time formulation is used to calculate the energy of each carrier. Drift in the electric field and diffusion are modeled using the diffusive model proposed by Hockney. Simulations are carried out for silicon diodes. It is found that inclusion of the energy relaxation mechanisms modifies mainly the avalanche process for such material. The implications of these mechanisms on device performances are then discussed by calculating the large signal level dependence of the conversion efficiency and admittance for a typical double-drift structure at 100 GHz. The resulting calculations show good agreement with existing experimental data on these structures.

E. Constant

Papers

Simplified particle simulation of millimeter-wave IMPATT devices