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E. Paumier

Researcher at Centre national de la recherche scientifique

Publications -  36
Citations -  658

E. Paumier is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Ion & Silicon. The author has an hindex of 14, co-authored 36 publications receiving 617 citations.

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An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

TL;DR: In this article, the Stillinger-Weber potential has been parametrized for GaN with bond-type dependent parameters to allow efficient atomic simulations of large systems containing wrong, dangling and extra bonds.
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Formation mechanism and relative stability of the { 112 ¯ 0 } stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

TL;DR: In this paper, a modified Stillinger-Weber potential was used in order to investigate the relative stability of the two atomic configurations which have comparable energy in wurtzite (Ga,Al,In)N.
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Phase transformation induced in pure zirconia by high energy heavy ion irradiation

TL;DR: In this paper, X-ray diffraction and complementary Raman spectroscopy analyses revealed two main features of monoclinic zirconia: 1) the evolution of the amount of the tetragonal phase with the ion fluence exhibits a sigmoidal shape suggesting a mechanism for phase transformation which very likely needs two ion impacts.
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Atomic and cluster ion bombardment in the electronic stopping power regime: A thermal spike description

TL;DR: In this paper, the thermal spike model is developed using a numerical solution of two coupled equations describing the energy diffusion on the electrons and on the lattice atoms respectively and their coupling.
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Phase transformation of polycrystalline zirconia induced by swift heavy ion irradiation

TL;DR: In this article, room-temperature X-ray diffraction (XRD) and micro-Raman spectroscopy measurements show consistently that a phase transition to the tetragonal form (β-ZrO 2 ) occurs for 170 MeV 84 Kr ion irradiation above an electronic stopping power value around 15 MeV μm −1.