1. An electrophotographic photosensitive member comprising an electroconductive support and a photosensitive layer on said electroconductive support, said a compound represented by the formula (16)
 wherein each of R 16-1 and R 16-2 is a substituted or unsubstituted alkyl group or a substituted or unsubstituted aromatic ring group; each of R 16-3 and R 16-4 is a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group or a substituted or unsubstituted aromatic ring group; X is an oxygen atom, a sulfur atom, =C(CN) 2 ,
 each of R 16-5 and R 16-6 is a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aromatic ring group or a substituted or unsubstituted heterocyclic ring group; each of R 16-7 and R 16-8 is a hydrogen atom, a cyano group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aromatic ring group or a substituted or unsubstituted heterocyclic ring group, provided that R 16-5 and R 16-6 as well as R 16-7 and R 16-8 are not hydrogen atoms at the same time.

Electrophotographic photosensitive member

Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Image forming member for electrophotography

A light receiving member comprising a photoconductive layer disposed on an electrically conductive surface of a substrate, said photoconductive layer being constituted by a non-single crystal material containing silicon atoms as a matrix and at least one kind of atoms selected from hydrogen atoms and halogen atoms, wherein said photoconductive layer contains a plurality of layer regions which are different from each other with respect to characteristic energy at an exponential tail obtained from a light absorption spectrum, hydrogen content and optical band gap. The light receiving member exhibits excellent potential characteristics and image-forming performance for visible laser.

Light-receiving member

First principle calculations of amorphous hydrogenated silicon Schottky barrier and p‐i‐n diodes’ current‐voltage characteristics have revealed an interesting relation between the observed quality factor and the composition of the diode current. The diode current consists of two components: (1) The drift/diffusion current, JD, which is virtually independent of carrier recombination mechanism, and (2) the recombination current JR. Each component has a characteristic value of the quality factor, β (inverse slope of semilog J‐V plot): β<1.1 for JD and β⩾1.6 for JR. In addition, the relative magnitudes of the two components vary with the device thickness, the density of localized states, and the surface barrier potential. The difference in the quality factors observed in Schottky barriers and in p‐i‐n diodes can be interpreted as an indication of change in the dominant component from JD to JR, due to a larger surface potential in the latter device.

On the current‐voltage characteristics of amorphous hydrogenated silicon Schottky diodes

Disclosed is an electrophotographic photoresponsive device comprised of a supporting substrate, an amorphous silicon charge transport layer, a trapping layer comprised of doped amorphous silicon, and a top insulating overcoating layer.

Electrophotographic devices containing overcoated amorphous silicon compositions

A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.

Photoconductive member with alpha -Si(C) barrier layer

A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms a constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.

Photoconductive member with α-Si(C) barrier layer

A photoconductive member which is stable in its electrical and optical characteristics, not influenced by circumstances for its use, and possesses extremely high sensitivity to light, remarkably high anti-photo-fatigue property, and deterioration-resistant against repeated use, the photoconductive member comprising a substrate; a photoconductive layer; a barrier layer between the substrate and the photoconductive layer, and having a function of substantially inhibiting injection of carriers from the substrate side to the photoconductive layer; and a depletion layer region formed in the interfacial region of the photoconductive layer and the barrier layer, wherein the photoconductive layer and the barrier layer are made of an amorphous material with silicon as a matrix and hydrogen as a constituent atom, a part of the barrier layer is present between the depletion layer region and the substrate in such a thickness that, in order to inhibit injection of the carriers having the same polarity as that of minority carriers in the barrier layer from the substrate side to the photoconductive layer, probability of the carrier reaching the depletion layer region from the substrate side may be substantially neglected, and the photocarriers in the photoconductive layer having the same polarity as that of majority carriers in the barrier layer, among the photo-carriers to be generated in the photoconductive layer by irradiation of electromagnetic waves, are caused to move in the direction of the barrier layer.

Photoconductive member having barrier and depletion layers

A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and oxygen atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hdyrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and oxygen atoms as constituent. A photoconductive member having a support a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and oxygen atoms as constituent.

Photoconductive member with two amorphous silicon layers

Charging and photodischarging characteristics were investigated for the photoreceptors of amorphous silicon prepared by rf glow discharge of silane. For the positive corona, a sufficient charge retention was attained in the photoreceptor providing a thin layer of a‐silicon doped with boron between the photosensitive Si:H film and the conductive substrate to prohibit the injection of carriers from the substrate. The photoconductivity gain of unity was attained in the photoreceptor when it was illuminated with visible light. A range‐limited photocurrent flow was observed in the photoreceptor with a thick a‐Si:H layer and the value of 2×10−8 cm2/V was estimated as μτ product of photoholes. The space‐charge perturbed photocurrent was observed in the photoreceptor for the negative corona. The structure of the photoreceptor is intrinsic a‐Si:H/n‐type of a‐silicon on a conductive substrate. In this case, the photocurrent flow was effectively perturbed by a space charge that accumulated in the photoconductor owin...

Eiichi Inoue

Papers

Photoconductive member with alpha -Si(C) barrier layer

Photoconductive member with α-Si(C) barrier layer

Photoconductive member having barrier and depletion layers

Photoconductive member with two amorphous silicon layers

Photoreceptor of a-Si:H with diodelike structure for electrophotography