There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

This paper describes the contents of the 2016 edition of the HITRAN molecular spectroscopic compilation. The new edition replaces the previous HITRAN edition of 2012 and its updates during the intervening years. The HITRAN molecular absorption compilation is composed of five major components: the traditional line-by-line spectroscopic parameters required for high-resolution radiative-transfer codes, infrared absorption cross-sections for molecules not yet amenable to representation in a line-by-line form, collision-induced absorption data, aerosol indices of refraction, and general tables such as partition sums that apply globally to the data. The new HITRAN is greatly extended in terms of accuracy, spectral coverage, additional absorption phenomena, added line-shape formalisms, and validity. Moreover, molecules, isotopologues, and perturbing gases have been added that address the issues of atmospheres beyond the Earth. Of considerable note, experimental IR cross-sections for almost 300 additional molecules important in different areas of atmospheric science have been added to the database. The compilation can be accessed through www.hitran.org. Most of the HITRAN data have now been cast into an underlying relational database structure that offers many advantages over the long-standing sequential text-based structure. The new structure empowers the user in many ways. It enables the incorporation of an extended set of fundamental parameters per transition, sophisticated line-shape formalisms, easy user-defined output formats, and very convenient searching, filtering, and plotting of data. A powerful application programming interface making use of structured query language (SQL) features for higher-level applications of HITRAN is also provided.

/pdf/the-hitran-2008-molecular-spectroscopic-database-1ud8clpej3.pdf

The HITRAN 2008 molecular spectroscopic database

Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.

Microstrip filters for RF/microwave applications

A new type of metallic electromagnetic structure has been developed that is characterized by having high surface impedance. Although it is made of continuous metal, and conducts dc currents, it does not conduct ac currents within a forbidden frequency band. Unlike normal conductors, this new surface does not support propagating surface waves, and its image currents are not phase reversed. The geometry is analogous to a corrugated metal surface in which the corrugations have been folded up into lumped-circuit elements, and distributed in a two-dimensional lattice. The surface can be described using solid-state band theory concepts, even though the periodicity is much less than the free-space wavelength. This unique material is applicable to a variety of electromagnetic problems, including new kinds of low-profile antennas.

/pdf/high-impedance-electromagnetic-surfaces-with-a-forbidden-3vtu72a5an.pdf

High-impedance electromagnetic surfaces with a forbidden frequency band

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm2 and a peak-to-valley current ratio of ≈1.15 across different sizes.

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

This paper reviews some of the key challenges in developing solid-state electronics operating at power levels from approximately 0.1 to beyond 1 MW. Applications exist in this range of power for military and commercial applications alike. The technology of great interest is wide-band-gap semiconductors, particularly SiC, which is well known for its superior electrical strength and thermal conductivity compared to the traditional power semiconductor, Si. These properties can be utilized to have significant benefits at both the device and systems level.

Megawatt solid-state electronics

Strong, repeatable Terahertz (THz) signatures are measured in small samples of DNA solution using a THz photomixing spectrometer with custom conical-horn coupling. The DNA specimen is linear, single-stranded (ss), 13-mer polynucleotide, and is diluted in buffer solution to have a concentration of 0.15 μmol/ml. The strongest signature is centered ∼717 GHz, and has a strength of 2.5 × 1016 cm−1/mol, linewidth 48 GHz, and damping time of 6.6 ps. The origin of the signature is attributed to the hydrogen bond of locally cross-linked ssDNAs.

Observation of terahertz absorption signatures in microliter DNA solutions

Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature. Three different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy (MBE). All samples displayed a single electroluminescent spectral peak at 360 nm with full-width at half-maximum (FWHM) values no greater than 16 nm and an external quantum efficiency (EQE) of ≈0.0074% at 18.8 mA. In contrast to traditional GaN light emitters, p-type doping and p-contacts are completely avoided, and instead, holes are created in the GaN on the emitter side of the tunneling structure by direct interband (that is, Zener) tunneling from the valence band to the conduction band on the collector side. The Zener tunneling is enhanced by the high electric fields (~5 × 106 V cm−1) created by the notably large polarization-induced sheet charge at the interfaces between the AlN and GaN. Narrow-band ultraviolet electroluminescence has been observed from unipolar GaN/AlN heterostructures. Ever since the realization of GaN light-emitting diodes in the early 1990s, GaN photonics has been growing steadily, but a significant bottleneck has been p-type GaN contacts, which are hard to grow and to realize uniform injection of carriers. Now, Paul Berger of Ohio State University and co-workers have developed devices that eliminate the need for p-type GaN doping by using a bipolar tunneling scheme for charge injection. The light emission of the devices was centered on a wavelength of 360 nanometers and had a narrow spectral width of less than 16 nanometers. While the devices had an optical power on the microwatt scale and a low quantum efficiency, the team anticipates that their performance can be improved by subsequent optimization.

/pdf/near-uv-electroluminescence-in-unipolar-doped-bipolar-3ujd1ibaud.pdf

Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

This paper presents a novel low-loss (1.74 dB) 3-pole Butterworth distributed filter operating in the Ka-band with a center frequency of 29 GHz. The filter has a compact 6 mm square footprint and is designed using 3-dimensional (3D) micromachined integrated coax. The integrated coax transmission lines are made of forty-one nickel layers and fabricated using a selective electrochemical metal deposition process (EFAB/spl trade/). Full-wave simulations of the filter using Ansoft HFSS show very good agreement on insertion loss compared with measured results. Using the EFAB/spl trade/, we have been able to produce low-loss, all-metal, completely shielded transmission lines with small bend radii and no inter-line coupling.

Elliott R. Brown

Papers

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Megawatt solid-state electronics

Observation of terahertz absorption signatures in microliter DNA solutions

Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

A compact low-loss Ka-band filter using 3-dimensional micromachined integrated coax